$Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various <inline-formula><tex-math notation="LaTeX">$V_{\text{GS}}$</tex-math></inline-formula> Biases$

Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various <inline-formula><tex-math notation="LaTeX">$V_{\text{GS}}$</tex-math></inline-formula> Biases

In this work, SiC planar-gate MOSFET (PG-MOS), SiC short-channel (0.3<inline-formula><tex-math notation="LaTeX">$\mathbf {\mu m}$</tex-math></inline-formula>) MOSFET (SCMOS), and SiC JBSFET are tested for the third quadrant I-V temperature characteristics and surge...

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Bibliographic Details
Main Authors:	Xinbin Zhan, Yanjing He, Xi Jiang, Hao Yuan, Qingwen Song, Xiaoyan Tang, Xiaowu Gong, Yuming Zhang
Format:	Article
Language:	English
Published:	IEEE 2025-01-01
Series:	IEEE Open Journal of Power Electronics
Subjects:	SiC MOSFET short channel SiC JBSFET third quadrant surge current capability
Online Access:	https://ieeexplore.ieee.org/document/11023073/
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