Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes
We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED) array sharing a common p-electrode (anode), and with individually addressable n-...
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2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8093753/ |
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| author | Enyuan Xie Mark Stonehouse Ricardo Ferreira Jonathan J. D. McKendry Johannes Herrnsdorf Xiangyu He Sujan Rajbhandari Hyunchae Chun Aravind V. N. Jalajakumari Oscar Almer Grahame Faulkner Ian M. Watson Erdan Gu Robert Henderson Dominic O'Brien Martin D. Dawson |
| author_facet | Enyuan Xie Mark Stonehouse Ricardo Ferreira Jonathan J. D. McKendry Johannes Herrnsdorf Xiangyu He Sujan Rajbhandari Hyunchae Chun Aravind V. N. Jalajakumari Oscar Almer Grahame Faulkner Ian M. Watson Erdan Gu Robert Henderson Dominic O'Brien Martin D. Dawson |
| author_sort | Enyuan Xie |
| collection | DOAJ |
| description | We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm<inline-formula><tex-math notation="LaTeX">$^2$</tex-math></inline-formula> in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED element with 24 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED elements per array and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error is achieved for single- and multiple-<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> LED-element operations, under an <sc>on</sc>–<sc>off</sc>-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>LED elements can transmit discrete multilevel signals. |
| format | Article |
| id | doaj-art-35b363fed3f34f9d8bf564d0ca938121 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-35b363fed3f34f9d8bf564d0ca9381212025-08-20T03:30:55ZengIEEEIEEE Photonics Journal1943-06552017-01-019611110.1109/JPHOT.2017.27684788093753Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-ElectrodesEnyuan Xie0https://orcid.org/0000-0001-7776-8091Mark Stonehouse1https://orcid.org/0000-0001-6921-6510Ricardo Ferreira2https://orcid.org/0000-0003-1731-1588Jonathan J. D. McKendry3Johannes Herrnsdorf4https://orcid.org/0000-0002-3856-5782Xiangyu He5https://orcid.org/0000-0002-3693-8821Sujan Rajbhandari6https://orcid.org/0000-0001-8742-118XHyunchae Chun7https://orcid.org/0000-0002-3907-4862Aravind V. N. Jalajakumari8https://orcid.org/0000-0001-5711-033XOscar Almer9Grahame Faulkner10Ian M. Watson11https://orcid.org/0000-0002-8797-3993Erdan Gu12Robert Henderson13Dominic O'Brien14Martin D. Dawson15https://orcid.org/0000-0002-6639-2989Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Department of Engineering Science, University of Oxford, Oxford, U.K.Department of Engineering Science, University of Oxford, Oxford, U.K.CMOS Sensors and Systems Group, University of Edinburgh, Edinburgh, U.K.CMOS Sensors and Systems Group, University of Edinburgh, Edinburgh, U.K.Department of Engineering Science, University of Oxford, Oxford, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.CMOS Sensors and Systems Group, University of Edinburgh, Edinburgh, U.K.Department of Engineering Science, University of Oxford, Oxford, U.K.Institute of Photonics, Department of Physics, University of Strathclyde, Glasgow, U.K.We demonstrate the development, performance, and application of a GaN-based micro-light emitting diode ( <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated by an example array emitting at 450 nm. At a current density of 17.7 kA/cm<inline-formula><tex-math notation="LaTeX">$^2$</tex-math></inline-formula> in direct-current operation, the optical power and small signal electrical-to-optical modulation bandwidth of a single <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED element with 24 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m diameter are over 2.0 mW and 440 MHz, respectively. The optimized fabrication process also ensures a high yield of working <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>LED elements per array and excellent element-to-element uniformity of electrical/optical characteristics. Results on visible light communication are presented as an application of an array integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error is achieved for single- and multiple-<inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> LED-element operations, under an <sc>on</sc>–<sc>off</sc>-keying modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to confirm that the <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>LED elements can transmit discrete multilevel signals.https://ieeexplore.ieee.org/document/8093753/GaNmicro-light emitting diode arrayIndividual addressing by n-electrodesvisible light communication. |
| spellingShingle | Enyuan Xie Mark Stonehouse Ricardo Ferreira Jonathan J. D. McKendry Johannes Herrnsdorf Xiangyu He Sujan Rajbhandari Hyunchae Chun Aravind V. N. Jalajakumari Oscar Almer Grahame Faulkner Ian M. Watson Erdan Gu Robert Henderson Dominic O'Brien Martin D. Dawson Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes IEEE Photonics Journal GaN micro-light emitting diode array Individual addressing by n-electrodes visible light communication. |
| title | Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes |
| title_full | Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes |
| title_fullStr | Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes |
| title_full_unstemmed | Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes |
| title_short | Design, Fabrication, and Application of GaN-Based Micro-LED Arrays With Individual Addressing by N-Electrodes |
| title_sort | design fabrication and application of gan based micro led arrays with individual addressing by n electrodes |
| topic | GaN micro-light emitting diode array Individual addressing by n-electrodes visible light communication. |
| url | https://ieeexplore.ieee.org/document/8093753/ |
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