Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment. The planar SiC MOSFET shows the best anti-surge ability, and the maximum surge current density peak reaches 35 A/mm<sup>2</sup>, while t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2021-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.005 |
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