Study on Anti-surge Capacity of Body Diode of 1 200 V SiC MOSFET
The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment. The planar SiC MOSFET shows the best anti-surge ability, and the maximum surge current density peak reaches 35 A/mm<sup>2</sup>, while t...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2021-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.005 |
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| Summary: | The anti-surge capability of the body diode of 1 200 V planar, double trench and asymmetric trench SiC MOSFETs was compared and analyzed by experiment. The planar SiC MOSFET shows the best anti-surge ability, and the maximum surge current density peak reaches 35 A/mm<sup>2</sup>, while the anti-surge ability of double groove and asymmetric groove SiC MOSFET is roughly the same, 22 A/mm<sup>2</sup> and 25 A/mm<sup>2</sup> respectively. After the maximum surge current, the threshold voltage, drain current and breakdown voltage of the three SiC MOSFET devices fail. The failure mechanism is a three terminal short circuit caused by thermal breakdown.The comparative test results show that the planar SiC MOSFET shows good anti-surge current ability due to lower gate oxide defects,while the double channel SiC MOSFET is more likely to fail in surge test due to stronger thermal effect caused by channel leakage current under surge stress. |
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| ISSN: | 1000-128X |