Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time
Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propos...
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MDPI AG
2025-03-01
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| Series: | Nanomaterials |
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| author | Qing-Hai Zhu Jian Chai Shi-Yu Wei Jia-Bao Sun Yi-Jun Sun Daisuke Kiriya Ming-Sheng Xu |
| author_facet | Qing-Hai Zhu Jian Chai Shi-Yu Wei Jia-Bao Sun Yi-Jun Sun Daisuke Kiriya Ming-Sheng Xu |
| author_sort | Qing-Hai Zhu |
| collection | DOAJ |
| description | Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe<sub>2</sub>/ultra-thin SiO<sub>2</sub>/Si photodetector (PD) with multiple optimization mechanisms. Due to the fact that photo-generated carriers can travel in the graphene plane toward the Au electrode, the introduction of a top graphene contact with low sheet resistance provides a carrier collection path in the vertical direction and further restricts the carrier recombination behavior at the lateral grain boundary of PtSe<sub>2</sub> film. The ultra-thin SiO<sub>2</sub> passivation layer reduces the defects at the PtSe<sub>2</sub>/Si heterojunction interface. As compared to the counterpart device without the graphene top contact, the responsivity, specific detectivity, and response speed of graphene/PtSe<sub>2</sub>/ultra-thin SiO<sub>2</sub>/Si PD under 808 nm illumination are improved to 0.572 A/W, 1.50 × 10<sup>11</sup> Jones, and 17.3/38.8 µs, respectively. The device can detect broad-spectrum optical signals as measured from 375 nm to 1550 nm under zero bias. The PD line array with 16-pixel units shows good near-infrared imaging ability at room temperature. Our study will provide guiding significance for how to improve the comprehensive properties of PDs based on 2D/Si heterostructure for practical applications. |
| format | Article |
| id | doaj-art-350562d36fdf4094b83f2770a5037c0d |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-350562d36fdf4094b83f2770a5037c0d2025-08-20T02:15:47ZengMDPI AGNanomaterials2079-49912025-03-0115751910.3390/nano15070519Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response TimeQing-Hai Zhu0Jian Chai1Shi-Yu Wei2Jia-Bao Sun3Yi-Jun Sun4Daisuke Kiriya5Ming-Sheng Xu6College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, and Zhejiang Key Laboratory of Advanced Micro-Nano Transducers Technology, Zhejiang University, Hangzhou 310027, ChinaCollege of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, and Zhejiang Key Laboratory of Advanced Micro-Nano Transducers Technology, Zhejiang University, Hangzhou 310027, ChinaCollege of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, and Zhejiang Key Laboratory of Advanced Micro-Nano Transducers Technology, Zhejiang University, Hangzhou 310027, ChinaCollege of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, ChinaCollege of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, ChinaDepartment of Basic Science, and Department of Integrated Sciences, The University of Tokyo, Tokyo 113-8654, JapanCollege of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, and Zhejiang Key Laboratory of Advanced Micro-Nano Transducers Technology, Zhejiang University, Hangzhou 310027, ChinaBurgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe<sub>2</sub>/ultra-thin SiO<sub>2</sub>/Si photodetector (PD) with multiple optimization mechanisms. Due to the fact that photo-generated carriers can travel in the graphene plane toward the Au electrode, the introduction of a top graphene contact with low sheet resistance provides a carrier collection path in the vertical direction and further restricts the carrier recombination behavior at the lateral grain boundary of PtSe<sub>2</sub> film. The ultra-thin SiO<sub>2</sub> passivation layer reduces the defects at the PtSe<sub>2</sub>/Si heterojunction interface. As compared to the counterpart device without the graphene top contact, the responsivity, specific detectivity, and response speed of graphene/PtSe<sub>2</sub>/ultra-thin SiO<sub>2</sub>/Si PD under 808 nm illumination are improved to 0.572 A/W, 1.50 × 10<sup>11</sup> Jones, and 17.3/38.8 µs, respectively. The device can detect broad-spectrum optical signals as measured from 375 nm to 1550 nm under zero bias. The PD line array with 16-pixel units shows good near-infrared imaging ability at room temperature. Our study will provide guiding significance for how to improve the comprehensive properties of PDs based on 2D/Si heterostructure for practical applications.https://www.mdpi.com/2079-4991/15/7/519two-dimensional PtSe<sub>2</sub>graphene contactpassivation layercarrier collectionbroadband photodetector |
| spellingShingle | Qing-Hai Zhu Jian Chai Shi-Yu Wei Jia-Bao Sun Yi-Jun Sun Daisuke Kiriya Ming-Sheng Xu Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time Nanomaterials two-dimensional PtSe<sub>2</sub> graphene contact passivation layer carrier collection broadband photodetector |
| title | Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time |
| title_full | Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time |
| title_fullStr | Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time |
| title_full_unstemmed | Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time |
| title_short | Graphene/PtSe<sub>2</sub>/Ultra-Thin SiO<sub>2</sub>/Si Broadband Photodetector with Large Responsivity and Fast Response Time |
| title_sort | graphene ptse sub 2 sub ultra thin sio sub 2 sub si broadband photodetector with large responsivity and fast response time |
| topic | two-dimensional PtSe<sub>2</sub> graphene contact passivation layer carrier collection broadband photodetector |
| url | https://www.mdpi.com/2079-4991/15/7/519 |
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