Surface-Assisted Luminescence: The PL Yellow Band and the EL of n-GaN Devices
Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not over...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/597265 |
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| Summary: | Although everybody should know that measurements are never performed directly on materials but on devices, this is not generally true. Devices are physical systems able to exchange energy and thus subject to the laws of physics, which determine the information they provide. Hence, we should not overlook device effects in measurements as we do by assuming naively that photoluminescence (PL) is bulk emission free from surface effects. By replacing this unjustified assumption with a proper model for GaN surface devices, their yellow band PL becomes surface-assisted luminescence that allows for the prediction of the weak electroluminescence recently observed in n-GaN devices when holes are brought to their surfaces. |
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| ISSN: | 1687-8108 1687-8124 |