Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated de...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/714097 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832552628505018368 |
|---|---|
| author | Lifeng Liu Yi Hou Weibing Zhang Dedong Han Yi Wang |
| author_facet | Lifeng Liu Yi Hou Weibing Zhang Dedong Han Yi Wang |
| author_sort | Lifeng Liu |
| collection | DOAJ |
| description | HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment. |
| format | Article |
| id | doaj-art-34e90be1cf324d85982045db959e5fc2 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-34e90be1cf324d85982045db959e5fc22025-02-03T05:58:11ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/714097714097Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM DevicesLifeng Liu0Yi Hou1Weibing Zhang2Dedong Han3Yi Wang4Institute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaInstitute of Microelectronics, Peking University, Beijing 100871, ChinaHfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.http://dx.doi.org/10.1155/2015/714097 |
| spellingShingle | Lifeng Liu Yi Hou Weibing Zhang Dedong Han Yi Wang Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices Advances in Condensed Matter Physics |
| title | Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices |
| title_full | Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices |
| title_fullStr | Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices |
| title_full_unstemmed | Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices |
| title_short | Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices |
| title_sort | ozone treatment improved the resistive switching uniformity of hfalo2 based rram devices |
| url | http://dx.doi.org/10.1155/2015/714097 |
| work_keys_str_mv | AT lifengliu ozonetreatmentimprovedtheresistiveswitchinguniformityofhfalo2basedrramdevices AT yihou ozonetreatmentimprovedtheresistiveswitchinguniformityofhfalo2basedrramdevices AT weibingzhang ozonetreatmentimprovedtheresistiveswitchinguniformityofhfalo2basedrramdevices AT dedonghan ozonetreatmentimprovedtheresistiveswitchinguniformityofhfalo2basedrramdevices AT yiwang ozonetreatmentimprovedtheresistiveswitchinguniformityofhfalo2basedrramdevices |