Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures
The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz to 250 kHz and the possibility of their use in...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2014-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/302 |
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| _version_ | 1849725761956610048 |
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| author | A. A. Druzhinin I. P. Osrovskkii Yu. M. Khoverko R. N. Koretskyy |
| author_facet | A. A. Druzhinin I. P. Osrovskkii Yu. M. Khoverko R. N. Koretskyy |
| author_sort | A. A. Druzhinin |
| collection | DOAJ |
| description | The paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz to 250 kHz and the possibility of their use in solid-state electronics, functioning at cryogenic temperatures. Characteristics of samples obtained with impedance measurements allow predicting certain specifications of reactive elements of solid state electronics based on polycrystalline and single crystalline silicon, operable at low temperatures. Using the established dependencies, separate elements in the form of solid-state electronics capacitive and inductive elements as well as a combined system in an oscillatory circuit, operable at cryogenic temperatures, have been suggested. The features of developed system depend on the structure of samples and their doping level, which allows changing the required parameters of the elements of solid state electronics in a wide range. |
| format | Article |
| id | doaj-art-34872f7bf4334969bfb078d7ecfbf6db |
| institution | DOAJ |
| issn | 2225-5818 2309-9992 |
| language | English |
| publishDate | 2014-12-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj-art-34872f7bf4334969bfb078d7ecfbf6db2025-08-20T03:10:23ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922014-12-015–6465010.15222/TKEA2014.2.46302Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperaturesA. A. Druzhinin0I. P. Osrovskkii1Yu. M. Khoverko2R. N. Koretskyy3Lviv Polytechnic National University, Lviv, UkraineLviv Polytechnic National University, Lviv, UkraineLviv Polytechnic National University, Lviv, UkraineLviv Polytechnic National University, Lviv, UkraineThe paper presents the study results of electrical properties of polycrystalline silicon films in silicon-on-insulator structures and Si whiskers in the temperature range of 4.2 – 70 K obtained by impedance measurements in the frequency range from 10 Hz to 250 kHz and the possibility of their use in solid-state electronics, functioning at cryogenic temperatures. Characteristics of samples obtained with impedance measurements allow predicting certain specifications of reactive elements of solid state electronics based on polycrystalline and single crystalline silicon, operable at low temperatures. Using the established dependencies, separate elements in the form of solid-state electronics capacitive and inductive elements as well as a combined system in an oscillatory circuit, operable at cryogenic temperatures, have been suggested. The features of developed system depend on the structure of samples and their doping level, which allows changing the required parameters of the elements of solid state electronics in a wide range.https://tkea.com.ua/index.php/journal/article/view/302polysiliconwhiskersoi-structurenyquist diagram |
| spellingShingle | A. A. Druzhinin I. P. Osrovskkii Yu. M. Khoverko R. N. Koretskyy Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures Tekhnologiya i Konstruirovanie v Elektronnoi Apparature polysilicon whisker soi-structure nyquist diagram |
| title | Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures |
| title_full | Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures |
| title_fullStr | Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures |
| title_full_unstemmed | Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures |
| title_short | Elements of solid state electronics based on soi-structures and si whiskers for cryogenic temperatures |
| title_sort | elements of solid state electronics based on soi structures and si whiskers for cryogenic temperatures |
| topic | polysilicon whisker soi-structure nyquist diagram |
| url | https://tkea.com.ua/index.php/journal/article/view/302 |
| work_keys_str_mv | AT aadruzhinin elementsofsolidstateelectronicsbasedonsoistructuresandsiwhiskersforcryogenictemperatures AT iposrovskkii elementsofsolidstateelectronicsbasedonsoistructuresandsiwhiskersforcryogenictemperatures AT yumkhoverko elementsofsolidstateelectronicsbasedonsoistructuresandsiwhiskersforcryogenictemperatures AT rnkoretskyy elementsofsolidstateelectronicsbasedonsoistructuresandsiwhiskersforcryogenictemperatures |