A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit
A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LN...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/284767 |
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| author | R. Malmqvist C. Samuelsson A. Gustafsson P. Rantakari S. Reyaz T. Vähä-Heikkilä A. Rydberg J. Varis D. Smith R. Baggen |
| author_facet | R. Malmqvist C. Samuelsson A. Gustafsson P. Rantakari S. Reyaz T. Vähä-Heikkilä A. Rydberg J. Varis D. Smith R. Baggen |
| author_sort | R. Malmqvist |
| collection | DOAJ |
| description | A K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1 dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption. |
| format | Article |
| id | doaj-art-343eb97db7fb4d57a545fd0b7ef1d56d |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-343eb97db7fb4d57a545fd0b7ef1d56d2025-08-20T02:24:05ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/284767284767A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid CircuitR. Malmqvist0C. Samuelsson1A. Gustafsson2P. Rantakari3S. Reyaz4T. Vähä-Heikkilä5A. Rydberg6J. Varis7D. Smith8R. Baggen9Department of Subsystems Technology, Swedish Defence Research Agency (FOI), SE-58330 Linköping, SwedenDepartment of Subsystems Technology, Swedish Defence Research Agency (FOI), SE-58330 Linköping, SwedenDepartment of Subsystems Technology, Swedish Defence Research Agency (FOI), SE-58330 Linköping, SwedenVTT Technical Research Centre of Finland, FI-02044 VTT, Espoo, FinlandDepartment of Engneering Sciences, Uppsala University, SE-75105 Uppsala, SwedenVTT Technical Research Centre of Finland, FI-02044 VTT, Espoo, FinlandDepartment of Engneering Sciences, Uppsala University, SE-75105 Uppsala, SwedenVTT Technical Research Centre of Finland, FI-02044 VTT, Espoo, FinlandOMMIC S.A.S., 94453 Limeil-Brèvannes Cedex, FranceDepartment of Antennas and EM-Modelling, IMST GmbH, D-47475 Kamp-Lintfort, GermanyA K-band (18–26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6–1.3 dB higher NF together with similar values of P1 dB at 18–25 GHz. The gain of one LNA circuit path is reduced by 25–30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.http://dx.doi.org/10.1155/2011/284767 |
| spellingShingle | R. Malmqvist C. Samuelsson A. Gustafsson P. Rantakari S. Reyaz T. Vähä-Heikkilä A. Rydberg J. Varis D. Smith R. Baggen A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit Active and Passive Electronic Components |
| title | A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit |
| title_full | A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit |
| title_fullStr | A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit |
| title_full_unstemmed | A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit |
| title_short | A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit |
| title_sort | k band rf mems enabled reconfigurable and multifunctional low noise amplifier hybrid circuit |
| url | http://dx.doi.org/10.1155/2011/284767 |
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