Recent progress on heteroepitaxial growth of single crystal diamond films
Abstract Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoe...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-11-01
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| Series: | Electron |
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| Online Access: | https://doi.org/10.1002/elt2.70 |
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| author | Vedaste Uwihoreye Yushuo Hu Guangyu Cao Xing Zhang Freddy E. Oropeza Kelvin H. L. Zhang |
| author_facet | Vedaste Uwihoreye Yushuo Hu Guangyu Cao Xing Zhang Freddy E. Oropeza Kelvin H. L. Zhang |
| author_sort | Vedaste Uwihoreye |
| collection | DOAJ |
| description | Abstract Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed. |
| format | Article |
| id | doaj-art-339e000ca40741539b262b61a67ae809 |
| institution | OA Journals |
| issn | 2751-2606 2751-2614 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electron |
| spelling | doaj-art-339e000ca40741539b262b61a67ae8092025-08-20T02:36:31ZengWileyElectron2751-26062751-26142024-11-0124n/an/a10.1002/elt2.70Recent progress on heteroepitaxial growth of single crystal diamond filmsVedaste Uwihoreye0Yushuo Hu1Guangyu Cao2Xing Zhang3Freddy E. Oropeza4Kelvin H. L. Zhang5College of Chemistry and Chemical Engineering Xiamen University Xiamen ChinaCollege of Chemistry and Chemical Engineering Xiamen University Xiamen ChinaCompound Semiconductor (Xiamen) Technology Co., Ltd Xiamen ChinaCompound Semiconductor (Xiamen) Technology Co., Ltd Xiamen ChinaIMDEA Energy Institute Parque Tecnológico de Móstoles Madrid SpainCollege of Chemistry and Chemical Engineering Xiamen University Xiamen ChinaAbstract Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed.https://doi.org/10.1002/elt2.70diamondheteroepitaxysemiconductorsthin filmsultra‐wide bandgap |
| spellingShingle | Vedaste Uwihoreye Yushuo Hu Guangyu Cao Xing Zhang Freddy E. Oropeza Kelvin H. L. Zhang Recent progress on heteroepitaxial growth of single crystal diamond films Electron diamond heteroepitaxy semiconductors thin films ultra‐wide bandgap |
| title | Recent progress on heteroepitaxial growth of single crystal diamond films |
| title_full | Recent progress on heteroepitaxial growth of single crystal diamond films |
| title_fullStr | Recent progress on heteroepitaxial growth of single crystal diamond films |
| title_full_unstemmed | Recent progress on heteroepitaxial growth of single crystal diamond films |
| title_short | Recent progress on heteroepitaxial growth of single crystal diamond films |
| title_sort | recent progress on heteroepitaxial growth of single crystal diamond films |
| topic | diamond heteroepitaxy semiconductors thin films ultra‐wide bandgap |
| url | https://doi.org/10.1002/elt2.70 |
| work_keys_str_mv | AT vedasteuwihoreye recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms AT yushuohu recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms AT guangyucao recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms AT xingzhang recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms AT freddyeoropeza recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms AT kelvinhlzhang recentprogressonheteroepitaxialgrowthofsinglecrystaldiamondfilms |