One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach
In this study, Mg-doped Cu2ZnSnS4 (CZTS) thin films were prepared by the ionic solution spraying method, which is simple, low cost, and low temperature. The samples were annealed at the optimal doping level. In this study, the relationship between the magnesium doping level, the annealing process co...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0271004 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849692927319605248 |
|---|---|
| author | Chengxu Yan Yu Sun Jing Yang Canyun Zhang Fengchao Wang Jin Chen |
| author_facet | Chengxu Yan Yu Sun Jing Yang Canyun Zhang Fengchao Wang Jin Chen |
| author_sort | Chengxu Yan |
| collection | DOAJ |
| description | In this study, Mg-doped Cu2ZnSnS4 (CZTS) thin films were prepared by the ionic solution spraying method, which is simple, low cost, and low temperature. The samples were annealed at the optimal doping level. In this study, the relationship between the magnesium doping level, the annealing process conditions (temperature and duration), and various aspects of the sample properties was systematically investigated and discussed. These properties include film crystallinity, optical absorption properties, atomic ratios, and elemental composition. The results show that the Cu2Mg0.2Zn0.8SnS4 thin sample annealed at 500 °C for 10 min exhibits the best thin-film properties and has a relatively ideal atomic ratio. The replacement of Zn2+ ions with Mg2+ ions in the Cu2ZnSnS4 lattice leads to improved surface uniformity and densification, significant grain coarsening, and a reduction in the material’s optical bandgap to 1.37 eV. These materials demonstrate promising scalability for solar energy conversion applications, with cost-effective processing protocols and enhanced performance characteristics suggesting viable pathways for industrial implementation. |
| format | Article |
| id | doaj-art-331362ab355849ea9dae63c2d4c441da |
| institution | DOAJ |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-331362ab355849ea9dae63c2d4c441da2025-08-20T03:20:34ZengAIP Publishing LLCAIP Advances2158-32262025-05-01155055114055114-910.1063/5.0271004One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approachChengxu Yan0Yu Sun1Jing Yang2Canyun Zhang3Fengchao Wang4Jin Chen5College of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaCollege of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaCollege of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaCollege of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaCollege of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaCollege of Sciences, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, ChinaIn this study, Mg-doped Cu2ZnSnS4 (CZTS) thin films were prepared by the ionic solution spraying method, which is simple, low cost, and low temperature. The samples were annealed at the optimal doping level. In this study, the relationship between the magnesium doping level, the annealing process conditions (temperature and duration), and various aspects of the sample properties was systematically investigated and discussed. These properties include film crystallinity, optical absorption properties, atomic ratios, and elemental composition. The results show that the Cu2Mg0.2Zn0.8SnS4 thin sample annealed at 500 °C for 10 min exhibits the best thin-film properties and has a relatively ideal atomic ratio. The replacement of Zn2+ ions with Mg2+ ions in the Cu2ZnSnS4 lattice leads to improved surface uniformity and densification, significant grain coarsening, and a reduction in the material’s optical bandgap to 1.37 eV. These materials demonstrate promising scalability for solar energy conversion applications, with cost-effective processing protocols and enhanced performance characteristics suggesting viable pathways for industrial implementation.http://dx.doi.org/10.1063/5.0271004 |
| spellingShingle | Chengxu Yan Yu Sun Jing Yang Canyun Zhang Fengchao Wang Jin Chen One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach AIP Advances |
| title | One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach |
| title_full | One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach |
| title_fullStr | One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach |
| title_full_unstemmed | One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach |
| title_short | One-step fabrication for Mg-doped Cu2ZnSnS4 thin film via a facile ion-solution spraying approach |
| title_sort | one step fabrication for mg doped cu2znsns4 thin film via a facile ion solution spraying approach |
| url | http://dx.doi.org/10.1063/5.0271004 |
| work_keys_str_mv | AT chengxuyan onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach AT yusun onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach AT jingyang onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach AT canyunzhang onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach AT fengchaowang onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach AT jinchen onestepfabricationformgdopedcu2znsns4thinfilmviaafacileionsolutionsprayingapproach |