Enhancement of Photon Absorption on BaxSr1-xTiO3 Thin-Film Semiconductor Using Photonic Crystal

Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fraction x=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substr...

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Bibliographic Details
Main Authors: Abd. Wahidin Nuayi, Husin Alatas, Irzaman S. Husein, Mamat Rahmat
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:International Journal of Optics
Online Access:http://dx.doi.org/10.1155/2014/534145
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Summary:Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fraction x=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.
ISSN:1687-9384
1687-9392