Using the Transversal Admittance to Understand Organic Electrochemical Transistors
Abstract The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic‐electronic properties that play a central role in bioelectronics and neuromorphic applications. Some works applied impedance spectroscopy in OECTs for understanding transport properties and t...
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Wiley
2025-01-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202410393 |
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| author | Juan Bisquert Scott T. Keene |
| author_facet | Juan Bisquert Scott T. Keene |
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| description | Abstract The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic‐electronic properties that play a central role in bioelectronics and neuromorphic applications. Some works applied impedance spectroscopy in OECTs for understanding transport properties and the frequency‐dependent response of devices. The transversal admittance (drain current vs gate voltage) is used for sensing applications. However, a general theory of the transversal admittance, until now, has been incomplete. The derive a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, depending on several features as the chemical capacitance, the diffusion coefficient of ions, and the electronic mobility. Based on transport and charge conservation equations, it is shown that the vertical impedance produces a standard result of diffusion in intercalation systems, while the transversal impedance contains the electronic parameters of hole accumulation and transport along the channel. The spectral shapes of drain and gate currents and the complex admittance spectra are established by reference to equivalent circuit models for the vertical and transversal impedances, that describe well the measurements of a PEDOT:PSS OECT. New insights are provided to the determination of mobility by the ratio between drain and gate currents. |
| format | Article |
| id | doaj-art-321caaf608ad4498bac7cb8b73034e10 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-321caaf608ad4498bac7cb8b73034e102025-01-20T13:04:18ZengWileyAdvanced Science2198-38442025-01-01123n/an/a10.1002/advs.202410393Using the Transversal Admittance to Understand Organic Electrochemical TransistorsJuan Bisquert0Scott T. Keene1Instituto de Tecnología Química (Universitat Politècnica de València‐Agencia Estatal Consejo Superior de Investigaciones Científicas) Av. dels Tarongers València 46022 SpainDepartment of Engineering Electrical Engineering Division University of Cambridge Cambridge CB3 0FA UKAbstract The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic‐electronic properties that play a central role in bioelectronics and neuromorphic applications. Some works applied impedance spectroscopy in OECTs for understanding transport properties and the frequency‐dependent response of devices. The transversal admittance (drain current vs gate voltage) is used for sensing applications. However, a general theory of the transversal admittance, until now, has been incomplete. The derive a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, depending on several features as the chemical capacitance, the diffusion coefficient of ions, and the electronic mobility. Based on transport and charge conservation equations, it is shown that the vertical impedance produces a standard result of diffusion in intercalation systems, while the transversal impedance contains the electronic parameters of hole accumulation and transport along the channel. The spectral shapes of drain and gate currents and the complex admittance spectra are established by reference to equivalent circuit models for the vertical and transversal impedances, that describe well the measurements of a PEDOT:PSS OECT. New insights are provided to the determination of mobility by the ratio between drain and gate currents.https://doi.org/10.1002/advs.202410393admittancediffusionimpedance spectroscopyionic transistorsmobility |
| spellingShingle | Juan Bisquert Scott T. Keene Using the Transversal Admittance to Understand Organic Electrochemical Transistors Advanced Science admittance diffusion impedance spectroscopy ionic transistors mobility |
| title | Using the Transversal Admittance to Understand Organic Electrochemical Transistors |
| title_full | Using the Transversal Admittance to Understand Organic Electrochemical Transistors |
| title_fullStr | Using the Transversal Admittance to Understand Organic Electrochemical Transistors |
| title_full_unstemmed | Using the Transversal Admittance to Understand Organic Electrochemical Transistors |
| title_short | Using the Transversal Admittance to Understand Organic Electrochemical Transistors |
| title_sort | using the transversal admittance to understand organic electrochemical transistors |
| topic | admittance diffusion impedance spectroscopy ionic transistors mobility |
| url | https://doi.org/10.1002/advs.202410393 |
| work_keys_str_mv | AT juanbisquert usingthetransversaladmittancetounderstandorganicelectrochemicaltransistors AT scotttkeene usingthetransversaladmittancetounderstandorganicelectrochemicaltransistors |