Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer
The rapid evolution of microelectronics and display technologies has driven the demand for advanced manufacturing techniques capable of precise, high-speed microchip transfer. As devices shrink in size and increase in complexity, scalable and contactless methods for microscale placement are essentia...
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MDPI AG
2024-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/23/1926 |
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| author | DoYoung Kim Seong Ryu Sukang Bae Min Wook Lee Tae-Wook Kim Jong-Seong Bae Jiwon Park Seoung-Ki Lee |
| author_facet | DoYoung Kim Seong Ryu Sukang Bae Min Wook Lee Tae-Wook Kim Jong-Seong Bae Jiwon Park Seoung-Ki Lee |
| author_sort | DoYoung Kim |
| collection | DOAJ |
| description | The rapid evolution of microelectronics and display technologies has driven the demand for advanced manufacturing techniques capable of precise, high-speed microchip transfer. As devices shrink in size and increase in complexity, scalable and contactless methods for microscale placement are essential. Laser-induced forward transfer (LIFT) has emerged as a transformative solution, offering the precision and adaptability required for next-generation applications such as micro-light-emitting diodes (μ-LEDs). This study optimizes the LIFT process for the precise transfer of silicon microchips designed to mimic μ-LEDs. Critical parameters, including laser energy density, laser pulse width, and dynamic release layer (DRL) thickness are systematically adjusted to ensure controlled blister formation, a key factor for successful material transfer. The DRL, a polyimide-based photoreactive layer, undergoes photothermal decomposition under 355 nm laser irradiation, creating localized pressure that propels microchips onto the receiver substrate in a contactless manner. Using advanced techniques such as three-dimensional profilometry, X-ray photoelectron spectroscopy, and ultrafast imaging, this study evaluates the rupture dynamics of the DRL and the velocity of microchips during transfer. Optimization of the DRL thickness to 1 µm and a transfer velocity of 20 m s⁻<sup>1</sup> achieves a transfer yield of up to 97%, showcasing LIFT’s potential in μ-LED manufacturing and semiconductor production. |
| format | Article |
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| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-31c4449cc5e2408aa5bf9b0a1df4815d2025-08-20T01:55:33ZengMDPI AGNanomaterials2079-49912024-11-011423192610.3390/nano14231926Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip TransferDoYoung Kim0Seong Ryu1Sukang Bae2Min Wook Lee3Tae-Wook Kim4Jong-Seong Bae5Jiwon Park6Seoung-Ki Lee7School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaSchool of Material Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju 55324, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju 55324, Republic of KoreaDepartment of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju 54896, Republic of KoreaBusan Center, Korea Basic Science Institute, Busan 46742, Republic of KoreaR & D Center of JB Lab Corporation, Seoul 08788, Republic of KoreaSchool of Material Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaThe rapid evolution of microelectronics and display technologies has driven the demand for advanced manufacturing techniques capable of precise, high-speed microchip transfer. As devices shrink in size and increase in complexity, scalable and contactless methods for microscale placement are essential. Laser-induced forward transfer (LIFT) has emerged as a transformative solution, offering the precision and adaptability required for next-generation applications such as micro-light-emitting diodes (μ-LEDs). This study optimizes the LIFT process for the precise transfer of silicon microchips designed to mimic μ-LEDs. Critical parameters, including laser energy density, laser pulse width, and dynamic release layer (DRL) thickness are systematically adjusted to ensure controlled blister formation, a key factor for successful material transfer. The DRL, a polyimide-based photoreactive layer, undergoes photothermal decomposition under 355 nm laser irradiation, creating localized pressure that propels microchips onto the receiver substrate in a contactless manner. Using advanced techniques such as three-dimensional profilometry, X-ray photoelectron spectroscopy, and ultrafast imaging, this study evaluates the rupture dynamics of the DRL and the velocity of microchips during transfer. Optimization of the DRL thickness to 1 µm and a transfer velocity of 20 m s⁻<sup>1</sup> achieves a transfer yield of up to 97%, showcasing LIFT’s potential in μ-LED manufacturing and semiconductor production.https://www.mdpi.com/2079-4991/14/23/1926laser-induced forward transfermicro-light-emitting diodeblister actuationcontactless transfermicrochip |
| spellingShingle | DoYoung Kim Seong Ryu Sukang Bae Min Wook Lee Tae-Wook Kim Jong-Seong Bae Jiwon Park Seoung-Ki Lee Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer Nanomaterials laser-induced forward transfer micro-light-emitting diode blister actuation contactless transfer microchip |
| title | Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer |
| title_full | Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer |
| title_fullStr | Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer |
| title_full_unstemmed | Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer |
| title_short | Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer |
| title_sort | dynamics of blister actuation in laser induced forward transfer for contactless microchip transfer |
| topic | laser-induced forward transfer micro-light-emitting diode blister actuation contactless transfer microchip |
| url | https://www.mdpi.com/2079-4991/14/23/1926 |
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