Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by Inkjet Printing
We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channe...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2012/710908 |
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| Summary: | We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol) (PVP) matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications. |
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| ISSN: | 1687-9503 1687-9511 |