Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active l...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2017-04-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | https://tkea.com.ua/index.php/journal/article/view/211 |
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| _version_ | 1849315817182724096 |
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| author | B. P. Стемпицький Динь Ха Дао |
| author_facet | B. P. Стемпицький Динь Ха Дао |
| author_sort | B. P. Стемпицький |
| collection | DOAJ |
| description | The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A·T) and very low temperature cross sensitivity of 0,0273%/ºC) indicate the prospects of the proposed solutions for the practical use. |
| format | Article |
| id | doaj-art-316dc817ec92495bbd2bd1bb703bb73a |
| institution | Kabale University |
| issn | 2225-5818 2309-9992 |
| language | English |
| publishDate | 2017-04-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj-art-316dc817ec92495bbd2bd1bb703bb73a2025-08-20T03:52:03ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922017-04-011-2283210.15222/TKEA2017.1-2.28211Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructureB. P. Стемпицький0Динь Ха Дао1Belarusian State University of Informatics and Radioelectronics, Minsk, BelarusBelarusian State University of Informatics and Radioelectronics, Minsk, BelarusThe paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A·T) and very low temperature cross sensitivity of 0,0273%/ºC) indicate the prospects of the proposed solutions for the practical use.https://tkea.com.ua/index.php/journal/article/view/211high-temperature hall sensoralgan/gan heterostructurescomputer simulation |
| spellingShingle | B. P. Стемпицький Динь Ха Дао Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure Tekhnologiya i Konstruirovanie v Elektronnoi Apparature high-temperature hall sensor algan/gan heterostructures computer simulation |
| title | Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure |
| title_full | Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure |
| title_fullStr | Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure |
| title_full_unstemmed | Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure |
| title_short | Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure |
| title_sort | investigation of electric and magnetic characteristics of high temperature hall sensor based on algan gan heterostructure |
| topic | high-temperature hall sensor algan/gan heterostructures computer simulation |
| url | https://tkea.com.ua/index.php/journal/article/view/211 |
| work_keys_str_mv | AT bpstempicʹkij investigationofelectricandmagneticcharacteristicsofhightemperaturehallsensorbasedonalganganheterostructure AT dinʹhadao investigationofelectricandmagneticcharacteristicsofhightemperaturehallsensorbasedonalganganheterostructure |