Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal
1D simple and generalized Thue-Morse phoxonic quasicrystals with the minimum and the maximum number of layers of 10 and 25, respectively have been investigated to improve the acousto-optic interaction in C-band. SiO2 and Si materials have been utilized and the analysis is carried out by the finite e...
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Elsevier
2025-05-01
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| author | Hadiseh Imanian Mina Noori |
| author_facet | Hadiseh Imanian Mina Noori |
| author_sort | Hadiseh Imanian |
| collection | DOAJ |
| description | 1D simple and generalized Thue-Morse phoxonic quasicrystals with the minimum and the maximum number of layers of 10 and 25, respectively have been investigated to improve the acousto-optic interaction in C-band. SiO2 and Si materials have been utilized and the analysis is carried out by the finite element method. Diverse sequences of the proposed structures were investigated, starting with SiO2 or Si materials. Among various configurations of the Thue-Morse sequence, only the TM(5) structure with “a” (being the sum of A and B layers' thickness; a = dA + dB) of 420 nm, 540 nm, and 465 nm exhibited optical resonant modes regarding the sequence starting with SiO2 or Si materials. The proposed structure with a = 420 nm and a = 465 nm presented double phononic transmission peaks, with SiO2 material being the starting layer. While, for the structure starting with Si, only a single phononic mode appeared for a = 465 nm. Regarding the moving boundary and photoelastic effects, the enhanced acousto-optic interaction with ∼0.8 nm shift for the optical mode at ∼1550 nm has been obtained in the TM(5) structure. To the author's knowledge, this is the strongest optical wave modulation caused by mechanical waves in multilayers composed of SiO2 and Si. The above-mentioned optical frequency shift has been obtained for a = 420 nm, with layer thicknesses of dSiO2=132nm and dSi = 288 nm and applying a displacement of 0.17 nm at a phononic frequency of 13.562 GHz. TM(5) structure also showed the highest photonic quality factor of 1150, among all regarded structures. |
| format | Article |
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| institution | DOAJ |
| issn | 2405-8440 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Elsevier |
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| spelling | doaj-art-316c2da21d474a488e55d6a7be5104f22025-08-20T03:19:57ZengElsevierHeliyon2405-84402025-05-011110e4344210.1016/j.heliyon.2025.e43442Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystalHadiseh Imanian0Mina Noori1Department of Electrical Engineering, Sahand University of Technology, Tabriz, 51335-1996, Iran; Nano-Optics and Photonics Research Lab (NOPRL), Sahand University of Technology, Tabriz, IranDepartment of Electrical Engineering, Sahand University of Technology, Tabriz, 51335-1996, Iran; Nano-Optics and Photonics Research Lab (NOPRL), Sahand University of Technology, Tabriz, Iran; Corresponding author. Department of Electrical Engineering, Sahand University of Technology, Tabriz, 51335-1996, Iran.1D simple and generalized Thue-Morse phoxonic quasicrystals with the minimum and the maximum number of layers of 10 and 25, respectively have been investigated to improve the acousto-optic interaction in C-band. SiO2 and Si materials have been utilized and the analysis is carried out by the finite element method. Diverse sequences of the proposed structures were investigated, starting with SiO2 or Si materials. Among various configurations of the Thue-Morse sequence, only the TM(5) structure with “a” (being the sum of A and B layers' thickness; a = dA + dB) of 420 nm, 540 nm, and 465 nm exhibited optical resonant modes regarding the sequence starting with SiO2 or Si materials. The proposed structure with a = 420 nm and a = 465 nm presented double phononic transmission peaks, with SiO2 material being the starting layer. While, for the structure starting with Si, only a single phononic mode appeared for a = 465 nm. Regarding the moving boundary and photoelastic effects, the enhanced acousto-optic interaction with ∼0.8 nm shift for the optical mode at ∼1550 nm has been obtained in the TM(5) structure. To the author's knowledge, this is the strongest optical wave modulation caused by mechanical waves in multilayers composed of SiO2 and Si. The above-mentioned optical frequency shift has been obtained for a = 420 nm, with layer thicknesses of dSiO2=132nm and dSi = 288 nm and applying a displacement of 0.17 nm at a phononic frequency of 13.562 GHz. TM(5) structure also showed the highest photonic quality factor of 1150, among all regarded structures.http://www.sciencedirect.com/science/article/pii/S2405844025018286Phoxonic quasicrystalAcousto-optic interactionMoving boundaryPhotoelasticFinite element method |
| spellingShingle | Hadiseh Imanian Mina Noori Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal Heliyon Phoxonic quasicrystal Acousto-optic interaction Moving boundary Photoelastic Finite element method |
| title | Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal |
| title_full | Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal |
| title_fullStr | Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal |
| title_full_unstemmed | Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal |
| title_short | Study of acousto-optic interaction in 1D Thue-Morse phoxonic quasicrystal |
| title_sort | study of acousto optic interaction in 1d thue morse phoxonic quasicrystal |
| topic | Phoxonic quasicrystal Acousto-optic interaction Moving boundary Photoelastic Finite element method |
| url | http://www.sciencedirect.com/science/article/pii/S2405844025018286 |
| work_keys_str_mv | AT hadisehimanian studyofacoustoopticinteractionin1dthuemorsephoxonicquasicrystal AT minanoori studyofacoustoopticinteractionin1dthuemorsephoxonicquasicrystal |