Recombination mechanisms in crystalline silicon: bulk and surface contributions
In the present paper the most interesting results of a work on the influence of some processes used in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate are reported. In these studies the minority carrier lifetime and the surface recombination velocit...
Saved in:
Main Author: | Enrichetta Susi |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
1999-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/S1110662X99000203 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells
by: Yusi Chen, et al.
Published: (2017-01-01) -
EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
by: A. V. Mudryi, et al.
Published: (2015-03-01) -
Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots
by: Zaoyang Li, et al.
Published: (2013-01-01) -
Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence
by: Taweewat Krajangsang, et al.
Published: (2014-01-01) -
Optimization of Poly-Si/SiOx Passivated Contacts for Crystalline Silicon Bottom Cells Applications
by: Julci Ditsougou, et al.
Published: (2025-02-01)