Recombination mechanisms in crystalline silicon: bulk and surface contributions
In the present paper the most interesting results of a work on the influence of some processes used in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate are reported. In these studies the minority carrier lifetime and the surface recombination velocit...
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| Format: | Article |
| Language: | English |
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Wiley
1999-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/S1110662X99000203 |
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| _version_ | 1832562455547478016 |
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| author | Enrichetta Susi |
| author_facet | Enrichetta Susi |
| author_sort | Enrichetta Susi |
| collection | DOAJ |
| description | In the present paper the most interesting results of a work on the influence of some processes
used in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate are
reported. In these studies the minority carrier lifetime and the surface recombination velocity were used as
sensors of the Si electrical activity changes. Other electrical (DLTS, C-V and I-V characteristics, EBIC) and
structural (X-ray double crystal diffractometry, IR spectroscopy) techniques were used to gather information
about the nature and concentration of the defects induced by processing. |
| format | Article |
| id | doaj-art-306473103bb749cab928cdea6f9afdd2 |
| institution | Kabale University |
| issn | 1110-662X |
| language | English |
| publishDate | 1999-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-306473103bb749cab928cdea6f9afdd22025-02-03T01:22:34ZengWileyInternational Journal of Photoenergy1110-662X1999-01-011210711510.1155/S1110662X99000203Recombination mechanisms in crystalline silicon: bulk and surface contributionsEnrichetta Susi0Istituto LAMEL-CNR, via Gobetti 101, Bologna, ItalyIn the present paper the most interesting results of a work on the influence of some processes used in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate are reported. In these studies the minority carrier lifetime and the surface recombination velocity were used as sensors of the Si electrical activity changes. Other electrical (DLTS, C-V and I-V characteristics, EBIC) and structural (X-ray double crystal diffractometry, IR spectroscopy) techniques were used to gather information about the nature and concentration of the defects induced by processing.http://dx.doi.org/10.1155/S1110662X99000203 |
| spellingShingle | Enrichetta Susi Recombination mechanisms in crystalline silicon: bulk and surface contributions International Journal of Photoenergy |
| title | Recombination mechanisms in crystalline silicon: bulk and surface contributions |
| title_full | Recombination mechanisms in crystalline silicon: bulk and surface contributions |
| title_fullStr | Recombination mechanisms in crystalline silicon: bulk and surface contributions |
| title_full_unstemmed | Recombination mechanisms in crystalline silicon: bulk and surface contributions |
| title_short | Recombination mechanisms in crystalline silicon: bulk and surface contributions |
| title_sort | recombination mechanisms in crystalline silicon bulk and surface contributions |
| url | http://dx.doi.org/10.1155/S1110662X99000203 |
| work_keys_str_mv | AT enrichettasusi recombinationmechanismsincrystallinesiliconbulkandsurfacecontributions |