Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates

The primary aim of this research was to identify the optimal experimental conditions for obtaining aligned carbon nanotubes, temporarily leaving aside aspects such as the purity of carbon nanotubes, which is nonetheless crucial for potential applications in the field of nanoelectronics. The predefin...

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Main Authors: Nicolas Moreau, Antonio Fonseca, Danilo Vuono, Joseph Delhalle, Zineb Mekhalif, Pierantonio De Luca, Janos B.Nagy
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Inorganics
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Online Access:https://www.mdpi.com/2304-6740/13/4/113
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author Nicolas Moreau
Antonio Fonseca
Danilo Vuono
Joseph Delhalle
Zineb Mekhalif
Pierantonio De Luca
Janos B.Nagy
author_facet Nicolas Moreau
Antonio Fonseca
Danilo Vuono
Joseph Delhalle
Zineb Mekhalif
Pierantonio De Luca
Janos B.Nagy
author_sort Nicolas Moreau
collection DOAJ
description The primary aim of this research was to identify the optimal experimental conditions for obtaining aligned carbon nanotubes, temporarily leaving aside aspects such as the purity of carbon nanotubes, which is nonetheless crucial for potential applications in the field of nanoelectronics. The predefined alignment of CNTs can significantly influence the performance and efficiency of electronic components. In this study, two different catalytic supports based on cobalt nanoparticles, Co/SiO<sub>2</sub>/Si and Co/C, have been utilized and compared in the catalytic chemical vapor deposition (CCVD) synthesis of CNTs. Various parameters have been examined, including the nature and thickness of the catalyst, the reaction temperature, and the pressure of the acetylene mixture entering the reactor. The results indicate that the optimal temperature for the Co/SiO<sub>2</sub>/Si catalyst is 800 °C, while for the Co/C catalyst, it is 450 °C. The optimal Co layer thickness should be between 20 and 30 Å. CNT growth occurs from the top in the Co/C system, whereas bottom-up growth is characteristic of the Co/SiO<sub>2</sub>/Si catalyst, making the latter more suitable for the synthesis of CNTs intended for nanoelectronic devices.
format Article
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issn 2304-6740
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series Inorganics
spelling doaj-art-2feb4a664ca9401985d581a712e934fc2025-08-20T02:28:36ZengMDPI AGInorganics2304-67402025-04-0113411310.3390/inorganics13040113Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based SubstratesNicolas Moreau0Antonio Fonseca1Danilo Vuono2Joseph Delhalle3Zineb Mekhalif4Pierantonio De Luca5Janos B.Nagy6Laboratoire de Chimie et d’Electrochimie des Surfaces, Université de Namur, 5000 Namur, BelgiumLaboratoire de Chimie et d’Electrochimie des Surfaces, Université de Namur, 5000 Namur, BelgiumInstitute on Membrane Technology (ITM-CNR), 87036 Rende, ItalyLaboratoire de Chimie et d’Electrochimie des Surfaces, Université de Namur, 5000 Namur, BelgiumLaboratoire de Chimie et d’Electrochimie des Surfaces, Université de Namur, 5000 Namur, BelgiumDipartimento di Ingegneria Meccanica, Energetica e Gestionale, Università della Calabria, 87036 Arcavacata di Rende, ItalyDipartimento di Ingegneria Meccanica, Energetica e Gestionale, Università della Calabria, 87036 Arcavacata di Rende, ItalyThe primary aim of this research was to identify the optimal experimental conditions for obtaining aligned carbon nanotubes, temporarily leaving aside aspects such as the purity of carbon nanotubes, which is nonetheless crucial for potential applications in the field of nanoelectronics. The predefined alignment of CNTs can significantly influence the performance and efficiency of electronic components. In this study, two different catalytic supports based on cobalt nanoparticles, Co/SiO<sub>2</sub>/Si and Co/C, have been utilized and compared in the catalytic chemical vapor deposition (CCVD) synthesis of CNTs. Various parameters have been examined, including the nature and thickness of the catalyst, the reaction temperature, and the pressure of the acetylene mixture entering the reactor. The results indicate that the optimal temperature for the Co/SiO<sub>2</sub>/Si catalyst is 800 °C, while for the Co/C catalyst, it is 450 °C. The optimal Co layer thickness should be between 20 and 30 Å. CNT growth occurs from the top in the Co/C system, whereas bottom-up growth is characteristic of the Co/SiO<sub>2</sub>/Si catalyst, making the latter more suitable for the synthesis of CNTs intended for nanoelectronic devices.https://www.mdpi.com/2304-6740/13/4/113carbon nanotubesnanoparticlesCo-nanoparticlesphysical vapor deposition (PVD)catalytic chemical vapor deposition (CCVD)
spellingShingle Nicolas Moreau
Antonio Fonseca
Danilo Vuono
Joseph Delhalle
Zineb Mekhalif
Pierantonio De Luca
Janos B.Nagy
Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
Inorganics
carbon nanotubes
nanoparticles
Co-nanoparticles
physical vapor deposition (PVD)
catalytic chemical vapor deposition (CCVD)
title Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
title_full Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
title_fullStr Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
title_full_unstemmed Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
title_short Synthesis of Multiwalled Carbon Nanotubes on Different Cobalt Nanoparticle-Based Substrates
title_sort synthesis of multiwalled carbon nanotubes on different cobalt nanoparticle based substrates
topic carbon nanotubes
nanoparticles
Co-nanoparticles
physical vapor deposition (PVD)
catalytic chemical vapor deposition (CCVD)
url https://www.mdpi.com/2304-6740/13/4/113
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