Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study
Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteri...
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MDPI AG
2025-05-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/10/720 |
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| author | Wenkai Zhang Yafei Ning Hu Li Chaoqian Xu Yong Wang Yuhan Xia |
| author_facet | Wenkai Zhang Yafei Ning Hu Li Chaoqian Xu Yong Wang Yuhan Xia |
| author_sort | Wenkai Zhang |
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| description | Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. |
| format | Article |
| id | doaj-art-2f2068679f10491ab082d06eed48ee65 |
| institution | OA Journals |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-2f2068679f10491ab082d06eed48ee652025-08-20T01:56:44ZengMDPI AGNanomaterials2079-49912025-05-01151072010.3390/nano15100720Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT StudyWenkai Zhang0Yafei Ning1Hu Li2Chaoqian Xu3Yong Wang4Yuhan Xia5School of Integrated Circuits, Shandong University, Jinan 250101, ChinaSchool of Integrated Circuits, Shandong University, Jinan 250101, ChinaSchool of Integrated Circuits, Shandong University, Jinan 250101, ChinaSchool of Geodesy and Geomatics, Wuhan University, Wuhan 250101, ChinaSchool of Space Science and Technology, Institute of Space Sciences, Shandong University, Weihai 264209, ChinaSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 699010, SingaporeTwo-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization.https://www.mdpi.com/2079-4991/15/10/720DFT studyAg/Bi dopingInSebandgap modulationelectronic structure |
| spellingShingle | Wenkai Zhang Yafei Ning Hu Li Chaoqian Xu Yong Wang Yuhan Xia Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study Nanomaterials DFT study Ag/Bi doping InSe bandgap modulation electronic structure |
| title | Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study |
| title_full | Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study |
| title_fullStr | Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study |
| title_full_unstemmed | Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study |
| title_short | Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study |
| title_sort | doping characteristics and band engineering of inse for advanced photodetectors a dft study |
| topic | DFT study Ag/Bi doping InSe bandgap modulation electronic structure |
| url | https://www.mdpi.com/2079-4991/15/10/720 |
| work_keys_str_mv | AT wenkaizhang dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy AT yafeining dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy AT huli dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy AT chaoqianxu dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy AT yongwang dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy AT yuhanxia dopingcharacteristicsandbandengineeringofinseforadvancedphotodetectorsadftstudy |