Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors

Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors

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Bibliographic Details
Main Authors:	Shengjie Du, Xiuxia Li, Menglin Qiu, Yaohui Zhu, Weiyou Tang, Zhi Deng, Yang Tian, Yulan Li, Ke Jia, Zhengcao Li, Jianping Cheng, Shasha Lv
Format:	Article
Language:	English
Published:	American Chemical Society 2025-06-01
Series:	ACS Omega
Online Access:	https://doi.org/10.1021/acsomega.4c07343
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