Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2025-06-01
|
| Series: | ACS Omega |
| Online Access: | https://doi.org/10.1021/acsomega.4c07343 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849689803210096640 |
|---|---|
| author | Shengjie Du Xiuxia Li Menglin Qiu Yaohui Zhu Weiyou Tang Zhi Deng Yang Tian Yulan Li Ke Jia Zhengcao Li Jianping Cheng Shasha Lv |
| author_facet | Shengjie Du Xiuxia Li Menglin Qiu Yaohui Zhu Weiyou Tang Zhi Deng Yang Tian Yulan Li Ke Jia Zhengcao Li Jianping Cheng Shasha Lv |
| author_sort | Shengjie Du |
| collection | DOAJ |
| format | Article |
| id | doaj-art-2f046737005e42b0981437e1eb4cee4d |
| institution | DOAJ |
| issn | 2470-1343 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj-art-2f046737005e42b0981437e1eb4cee4d2025-08-20T03:21:31ZengAmerican Chemical SocietyACS Omega2470-13432025-06-011023240092401710.1021/acsomega.4c07343Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium DetectorsShengjie Du0Xiuxia Li1Menglin Qiu2Yaohui Zhu3Weiyou Tang4Zhi Deng5Yang Tian6Yulan Li7Ke Jia8Zhengcao Li9Jianping Cheng10Shasha Lv11Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, ChinaGreater Bay Area National Center of Technology Innovation, Particle Application Technology Innovation Center, Beijing, ChinaKey Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, ChinaKey Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, ChinaGreater Bay Area National Center of Technology Innovation, Particle Application Technology Innovation Center, Beijing, ChinaDepartment of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing, ChinaDepartment of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing, ChinaDepartment of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing, ChinaKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, ChinaKey Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, ChinaKey Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, ChinaKey Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing, Chinahttps://doi.org/10.1021/acsomega.4c07343 |
| spellingShingle | Shengjie Du Xiuxia Li Menglin Qiu Yaohui Zhu Weiyou Tang Zhi Deng Yang Tian Yulan Li Ke Jia Zhengcao Li Jianping Cheng Shasha Lv Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors ACS Omega |
| title | Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors |
| title_full | Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors |
| title_fullStr | Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors |
| title_full_unstemmed | Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors |
| title_short | Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors |
| title_sort | interfacial defect characteristics and low temperature electrical properties of the germanium oxynitride passivation film for ge based metal oxide semiconductor and high purity germanium detectors |
| url | https://doi.org/10.1021/acsomega.4c07343 |
| work_keys_str_mv | AT shengjiedu interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT xiuxiali interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT menglinqiu interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT yaohuizhu interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT weiyoutang interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT zhideng interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT yangtian interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT yulanli interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT kejia interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT zhengcaoli interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT jianpingcheng interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors AT shashalv interfacialdefectcharacteristicsandlowtemperatureelectricalpropertiesofthegermaniumoxynitridepassivationfilmforgebasedmetaloxidesemiconductorandhighpuritygermaniumdetectors |