Du, S., Li, X., Qiu, M., Zhu, Y., Tang, W., Deng, Z., . . . Lv, S. Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors. American Chemical Society.
Chicago Style (17th ed.) CitationDu, Shengjie, et al. Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors. American Chemical Society.
MLA (9th ed.) CitationDu, Shengjie, et al. Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors. American Chemical Society.