Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Enhanced etching of GaN with N2 gas addition during CVD diamond growth

Diamond on GaN materials processing is not straight-forward, as GaN is susceptible to a quasi-pure hydrogen CVD plasma etching. 1%, 3% and 5% N2 gas was gradually added to the H2 gas with fixed 6% CH4 in the recipe to promote the growth of diamond nanocrystals. Different types of microstructures wer...

Full description

Saved in:
Bibliographic Details
Main Authors: Awadesh Kumar Mallik, Giridharan Krishnamurthy, Wen-Ching Shih, Paulius Pobedinskas, Jan D’Haen, Ken Haenen
Format: Article
Language:English
Published: Taylor & Francis Group 2024-12-01
Series:Functional Diamond
Subjects:
cvd
etching
diamond
gan
microstructure
properties
Online Access:http://dx.doi.org/10.1080/26941112.2024.2393817
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items