Improving parameters of planar pulse diode using gettering
Pulse diodes are widely used as part of high-frequency pulse circuits. However, it should be noted that the cost of pulsed diodes remains relatively high, due to the low yield of suitable devices when they are sorted according to the criteria of reverse current and rated capacitance. This is largely...
Saved in:
| Main Authors: | Viktor Litvinenko, Yevgen Baganov, Ivan Vikulin, Victor Gorbachev |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2021-09-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/78 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Enhancing parameters of silicon varactors using laser gettering
by: I. M. Vikulin, et al.
Published: (2018-04-01) -
Rational Design of Nanostructured Porous and Advanced Getter Materials for Vacuum Insulation Panels
by: Juan Wang, et al.
Published: (2025-03-01) -
Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment
by: A. V. Karimov, et al.
Published: (2018-08-01) -
Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000
by: Sergio Sapienza, et al.
Published: (2024-03-01) -
Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC
by: Yantao LOU, et al.
Published: (2021-01-01)