Current Density of AlxGa1-xAs/GaAs Superlattice
Theoretically, the AlxGa1-xAs/GaAs superlattice is studied as a function of optical energy with and without bias. The transfer matrix approach has determined the transmission coefficient and resonant tunnelling current density. The number of barriers is estimated at N = 3, and the concentration rat...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad
2024-09-01
|
| Series: | Iraqi Journal of Physics |
| Subjects: | |
| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/1252 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850134991410823168 |
|---|---|
| author | Ahmed Z. Obaid Nidhal M. Abdul-Ameer Shaymaa Q. Abdul-Hasan Ebtisam M-T. Salman Moafak C. Abdulrida |
| author_facet | Ahmed Z. Obaid Nidhal M. Abdul-Ameer Shaymaa Q. Abdul-Hasan Ebtisam M-T. Salman Moafak C. Abdulrida |
| author_sort | Ahmed Z. Obaid |
| collection | DOAJ |
| description |
Theoretically, the AlxGa1-xAs/GaAs superlattice is studied as a function of optical energy with and without bias. The transfer matrix approach has determined the transmission coefficient and resonant tunnelling current density. The number of barriers is estimated at N = 3, and the concentration ratio (the mole fraction value) x at 0.1, 0.2, and 0.3 is fixed. The number of cells in the well is established at (ncw) = 5, while the number of barrier cells (ncb) is changed from 1 to 5 for both biases. This study shows that the change in the number of barrier cells plays a crucial role in the tunnelling of charge carriers and the transmission probability of charge carriers through the depletion regions. Thus, changing the current density is based on the purpose to be applied. In addition, the values of current density at the reverse bias are higher than that in the forward bias, which is explained by the bias controlling the energy levels of the superlattice. It is worth noting that there are many practical applications in which this system can be used, including solar cells, detectors, and light-emitting diodes.
|
| format | Article |
| id | doaj-art-2e986d9127ba4e8cbf616c2a10d0f464 |
| institution | OA Journals |
| issn | 2070-4003 2664-5548 |
| language | English |
| publishDate | 2024-09-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Iraqi Journal of Physics |
| spelling | doaj-art-2e986d9127ba4e8cbf616c2a10d0f4642025-08-20T02:31:34ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482024-09-0122310.30723/ijp.v22i3.1252Current Density of AlxGa1-xAs/GaAs SuperlatticeAhmed Z. Obaid0Nidhal M. Abdul-Ameer 1https://orcid.org/0000-0002-7748-2373Shaymaa Q. Abdul-Hasan2Ebtisam M-T. Salman3Moafak C. Abdulrida4Department of Physics, College of Education for Pure Science) Ibn Al-Haitham(, University of Baghdad, Baghdad, IraqDepartment of Physics, College of Education for Pure Science) Ibn Al-Haitham(, University of Baghdad, Baghdad, IraqDepartment of Physics, College of Education for Pure Science) Ibn Al-Haitham(, University of Baghdad, Baghdad, IraqDepartment of Physics, College of Education for Pure Science) Ibn Al-Haitham(, University of Baghdad, Baghdad, IraqDepartment of Medical Instrumentation Engineering Techniques Alsalam University College Baghdad, Iraq Theoretically, the AlxGa1-xAs/GaAs superlattice is studied as a function of optical energy with and without bias. The transfer matrix approach has determined the transmission coefficient and resonant tunnelling current density. The number of barriers is estimated at N = 3, and the concentration ratio (the mole fraction value) x at 0.1, 0.2, and 0.3 is fixed. The number of cells in the well is established at (ncw) = 5, while the number of barrier cells (ncb) is changed from 1 to 5 for both biases. This study shows that the change in the number of barrier cells plays a crucial role in the tunnelling of charge carriers and the transmission probability of charge carriers through the depletion regions. Thus, changing the current density is based on the purpose to be applied. In addition, the values of current density at the reverse bias are higher than that in the forward bias, which is explained by the bias controlling the energy levels of the superlattice. It is worth noting that there are many practical applications in which this system can be used, including solar cells, detectors, and light-emitting diodes. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/1252Current DensityResonant TunnellingAlxGa1-xAs/GaAs SuperlatticeTransfer MatrixTransmission |
| spellingShingle | Ahmed Z. Obaid Nidhal M. Abdul-Ameer Shaymaa Q. Abdul-Hasan Ebtisam M-T. Salman Moafak C. Abdulrida Current Density of AlxGa1-xAs/GaAs Superlattice Iraqi Journal of Physics Current Density Resonant Tunnelling AlxGa1-xAs/GaAs Superlattice Transfer Matrix Transmission |
| title | Current Density of AlxGa1-xAs/GaAs Superlattice |
| title_full | Current Density of AlxGa1-xAs/GaAs Superlattice |
| title_fullStr | Current Density of AlxGa1-xAs/GaAs Superlattice |
| title_full_unstemmed | Current Density of AlxGa1-xAs/GaAs Superlattice |
| title_short | Current Density of AlxGa1-xAs/GaAs Superlattice |
| title_sort | current density of alxga1 xas gaas superlattice |
| topic | Current Density Resonant Tunnelling AlxGa1-xAs/GaAs Superlattice Transfer Matrix Transmission |
| url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/1252 |
| work_keys_str_mv | AT ahmedzobaid currentdensityofalxga1xasgaassuperlattice AT nidhalmabdulameer currentdensityofalxga1xasgaassuperlattice AT shaymaaqabdulhasan currentdensityofalxga1xasgaassuperlattice AT ebtisammtsalman currentdensityofalxga1xasgaassuperlattice AT moafakcabdulrida currentdensityofalxga1xasgaassuperlattice |