Modeling and optimization of HS-IMPATT diode execution enriched with Si/SiC using ANN
This study offers a precise, expandable, and effective ANN (Artificial Neural Network) model to evaluate and calculate the important device parameters like breakdown voltage, efficiency, negative conductance, negative resistance, susceptance, and RF power of a heterostructure Si/3C-SiC-based IMPATT...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277267112500124X |
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