Mathematical Model of Silicon Oxidation in Microelectronics
The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. S...
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| Format: | Article |
| Language: | Russian |
| Published: |
Belarusian National Technical University
2006-04-01
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| Series: | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
| Online Access: | https://energy.bntu.by/jour/article/view/792 |
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| _version_ | 1832543693048905728 |
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| author | V. A. Bondarev |
| author_facet | V. A. Bondarev |
| author_sort | V. A. Bondarev |
| collection | DOAJ |
| description | The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. Suitable analytical and numerical solutions based on the diffusion equation have not yet been obtained |
| format | Article |
| id | doaj-art-2e4ca58888614380ba4cd834647edafb |
| institution | Kabale University |
| issn | 1029-7448 2414-0341 |
| language | Russian |
| publishDate | 2006-04-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
| spelling | doaj-art-2e4ca58888614380ba4cd834647edafb2025-02-03T11:34:22ZrusBelarusian National Technical UniversityИзвестия высших учебных заведений и энергетических объединенний СНГ: Энергетика1029-74482414-03412006-04-01026873785Mathematical Model of Silicon Oxidation in MicroelectronicsV. A. BondarevThe paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. Suitable analytical and numerical solutions based on the diffusion equation have not yet been obtainedhttps://energy.bntu.by/jour/article/view/792 |
| spellingShingle | V. A. Bondarev Mathematical Model of Silicon Oxidation in Microelectronics Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
| title | Mathematical Model of Silicon Oxidation in Microelectronics |
| title_full | Mathematical Model of Silicon Oxidation in Microelectronics |
| title_fullStr | Mathematical Model of Silicon Oxidation in Microelectronics |
| title_full_unstemmed | Mathematical Model of Silicon Oxidation in Microelectronics |
| title_short | Mathematical Model of Silicon Oxidation in Microelectronics |
| title_sort | mathematical model of silicon oxidation in microelectronics |
| url | https://energy.bntu.by/jour/article/view/792 |
| work_keys_str_mv | AT vabondarev mathematicalmodelofsiliconoxidationinmicroelectronics |