Mathematical Model of Silicon Oxidation in Microelectronics
The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. S...
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| Main Author: | |
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| Format: | Article |
| Language: | Russian |
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Belarusian National Technical University
2006-04-01
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| Series: | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
| Online Access: | https://energy.bntu.by/jour/article/view/792 |
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| Summary: | The paper involves analytical solutions and formulae for determination of the oxide film thickness in the silicon oxidation while using nitride mask. Calculations are based on solutions of a three-dimensional diffusion equation and new mathematical functions that are firstly defined by the author. Suitable analytical and numerical solutions based on the diffusion equation have not yet been obtained |
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| ISSN: | 1029-7448 2414-0341 |