Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition
Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tet...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300679 |
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| author | Fu‐Gow Tarntair Chih‐Yang Huang Siddharth Rana Kun‐Lin Lin Shao‐Hui Hsu Yu‐Cheng Kao Singh Jitendra Pratap Yi‐Che Chen Niall Tumilty Po‐Liang Liu Ray‐Hua Horng |
| author_facet | Fu‐Gow Tarntair Chih‐Yang Huang Siddharth Rana Kun‐Lin Lin Shao‐Hui Hsu Yu‐Cheng Kao Singh Jitendra Pratap Yi‐Che Chen Niall Tumilty Po‐Liang Liu Ray‐Hua Horng |
| author_sort | Fu‐Gow Tarntair |
| collection | DOAJ |
| description | Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tetraethoxysilane (TEOS) molar flow rate of 2.23 × 10−7 mol min−1 but increased with higher flow rates. The dopant concentrations of Ga2O3 grown at 825 °C with TEOS molar flows of 2.23 × 10−7, 4.47 × 10−7, and 6.69 × 10−7 mol min−1 are measured to be 5.5 × 1019, 1.1 × 1020, and 1.4 × 1020 atom cm−3, respectively, using secondary ion mass spectra and Hall measurements reveal n‐type nature with carrier concentrations of 6.5 × 1017, 3.2 × 1018, and 3.9 × 1018 atom/cm3 , respectively. To increase Si dopant activation, Ga2O3 growth temperature is raised to 875 °C. The result suggests a higher growth temperature can contribute to a greater probability of Si substitution on Ga lattice sites, which further reduces the resistivity of Ga2O3 epilayer. Moreover, results are compared with theoretical Density Functional Theory studies. |
| format | Article |
| id | doaj-art-2dfb5ab4913e45669651e65a76908bca |
| institution | Kabale University |
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| language | English |
| publishDate | 2025-01-01 |
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| series | Advanced Electronic Materials |
| spelling | doaj-art-2dfb5ab4913e45669651e65a76908bca2025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202300679Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor DepositionFu‐Gow Tarntair0Chih‐Yang Huang1Siddharth Rana2Kun‐Lin Lin3Shao‐Hui Hsu4Yu‐Cheng Kao5Singh Jitendra Pratap6Yi‐Che Chen7Niall Tumilty8Po‐Liang Liu9Ray‐Hua Horng10Institute of Electronics National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan, ROCInstitute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan, ROCInstitute of Electronics National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan, ROCNational Applied Research Laboratories Taiwan Semiconductor Research Institute (TSRI) Hsinchu 30091 Taiwan, ROCNational Applied Research Laboratories Taiwan Semiconductor Research Institute (TSRI) Hsinchu 30091 Taiwan, ROCDepartment of Materials Science and Engineering National Chung Hsing University Taichung 40227 Taiwan, ROCPhysics Department Indian Institute of Technology Delhi New Delhi 110016 IndiaGraduate Institute of Precision Engineering National Chung Hsing University Taichung 40227 Taiwan, ROCInternational College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan, ROCGraduate Institute of Precision Engineering National Chung Hsing University Taichung 40227 Taiwan, ROCInstitute of Electronics National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan, ROCAbstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tetraethoxysilane (TEOS) molar flow rate of 2.23 × 10−7 mol min−1 but increased with higher flow rates. The dopant concentrations of Ga2O3 grown at 825 °C with TEOS molar flows of 2.23 × 10−7, 4.47 × 10−7, and 6.69 × 10−7 mol min−1 are measured to be 5.5 × 1019, 1.1 × 1020, and 1.4 × 1020 atom cm−3, respectively, using secondary ion mass spectra and Hall measurements reveal n‐type nature with carrier concentrations of 6.5 × 1017, 3.2 × 1018, and 3.9 × 1018 atom/cm3 , respectively. To increase Si dopant activation, Ga2O3 growth temperature is raised to 875 °C. The result suggests a higher growth temperature can contribute to a greater probability of Si substitution on Ga lattice sites, which further reduces the resistivity of Ga2O3 epilayer. Moreover, results are compared with theoretical Density Functional Theory studies.https://doi.org/10.1002/aelm.202300679density functional theoryheteroepitaxial Ga2O3, MOCVDin situ dopingTEOS |
| spellingShingle | Fu‐Gow Tarntair Chih‐Yang Huang Siddharth Rana Kun‐Lin Lin Shao‐Hui Hsu Yu‐Cheng Kao Singh Jitendra Pratap Yi‐Che Chen Niall Tumilty Po‐Liang Liu Ray‐Hua Horng Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition Advanced Electronic Materials density functional theory heteroepitaxial Ga2O3, MOCVD in situ doping TEOS |
| title | Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
| title_full | Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
| title_fullStr | Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
| title_full_unstemmed | Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
| title_short | Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition |
| title_sort | material properties of n type β ga2o3 epilayers with in situ doping grown on sapphire by metalorganic chemical vapor deposition |
| topic | density functional theory heteroepitaxial Ga2O3, MOCVD in situ doping TEOS |
| url | https://doi.org/10.1002/aelm.202300679 |
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