Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET
We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on dire...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2011/713129 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850157574370885632 |
|---|---|
| author | Noureddine Maouhoub Khalid Rais |
| author_facet | Noureddine Maouhoub Khalid Rais |
| author_sort | Noureddine Maouhoub |
| collection | DOAJ |
| description | We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic 𝐼𝑑 (𝑉𝑔). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness. |
| format | Article |
| id | doaj-art-2dd183bfc35a4415ace6deed0c682ca2 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-2dd183bfc35a4415ace6deed0c682ca22025-08-20T02:24:07ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/713129713129Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFETNoureddine Maouhoub0Khalid Rais1Laboratoire d'Électronique, d'Instrumentation et de Traitement du Signal, Equipe de Caractérisation des Composants à Semi-Conducteurs, Faculté des Sciences, Université Chouaib Doukkali, BP 20, EL Jadida, MoroccoLaboratoire d'Électronique, d'Instrumentation et de Traitement du Signal, Equipe de Caractérisation des Composants à Semi-Conducteurs, Faculté des Sciences, Université Chouaib Doukkali, BP 20, EL Jadida, MoroccoWe present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic 𝐼𝑑 (𝑉𝑔). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness.http://dx.doi.org/10.1155/2011/713129 |
| spellingShingle | Noureddine Maouhoub Khalid Rais Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET Active and Passive Electronic Components |
| title | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET |
| title_full | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET |
| title_fullStr | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET |
| title_full_unstemmed | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET |
| title_short | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET |
| title_sort | characterization of series resistance and mobility degradation parameter and optimizing choice of oxide thickness in thin oxide n channel mosfet |
| url | http://dx.doi.org/10.1155/2011/713129 |
| work_keys_str_mv | AT noureddinemaouhoub characterizationofseriesresistanceandmobilitydegradationparameterandoptimizingchoiceofoxidethicknessinthinoxidenchannelmosfet AT khalidrais characterizationofseriesresistanceandmobilitydegradationparameterandoptimizingchoiceofoxidethicknessinthinoxidenchannelmosfet |