Large-Signal DG-MOSFET Modelling for RFID Rectification
This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated wit...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2016/8017139 |
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| _version_ | 1832562390800007168 |
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| author | R. Rodríguez B. González J. García A. Lázaro B. Iñiguez A. Hernández |
| author_facet | R. Rodríguez B. González J. García A. Lázaro B. Iñiguez A. Hernández |
| author_sort | R. Rodríguez |
| collection | DOAJ |
| description | This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. |
| format | Article |
| id | doaj-art-2d7ff87f43b74de18cbd12a899020de2 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-2d7ff87f43b74de18cbd12a899020de22025-02-03T01:22:44ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242016-01-01201610.1155/2016/80171398017139Large-Signal DG-MOSFET Modelling for RFID RectificationR. Rodríguez0B. González1J. García2A. Lázaro3B. Iñiguez4A. Hernández5Institute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, SpainInstitute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, SpainInstitute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, SpainDepartament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Escola Tècnica Superior d’Enginyeria, Av. Dels Països Catalans 26, 43007 Tarragona, SpainDepartament d’Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili, Escola Tècnica Superior d’Enginyeria, Av. Dels Països Catalans 26, 43007 Tarragona, SpainInstitute for Applied Microelectronics, Universidad de Las Palmas de Gran Canaria, Edificio de Electrónica y Telecomunicación, Campus Universitario de Tafira, 35017 Las Palmas, SpainThis paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out.http://dx.doi.org/10.1155/2016/8017139 |
| spellingShingle | R. Rodríguez B. González J. García A. Lázaro B. Iñiguez A. Hernández Large-Signal DG-MOSFET Modelling for RFID Rectification Advances in Condensed Matter Physics |
| title | Large-Signal DG-MOSFET Modelling for RFID Rectification |
| title_full | Large-Signal DG-MOSFET Modelling for RFID Rectification |
| title_fullStr | Large-Signal DG-MOSFET Modelling for RFID Rectification |
| title_full_unstemmed | Large-Signal DG-MOSFET Modelling for RFID Rectification |
| title_short | Large-Signal DG-MOSFET Modelling for RFID Rectification |
| title_sort | large signal dg mosfet modelling for rfid rectification |
| url | http://dx.doi.org/10.1155/2016/8017139 |
| work_keys_str_mv | AT rrodriguez largesignaldgmosfetmodellingforrfidrectification AT bgonzalez largesignaldgmosfetmodellingforrfidrectification AT jgarcia largesignaldgmosfetmodellingforrfidrectification AT alazaro largesignaldgmosfetmodellingforrfidrectification AT biniguez largesignaldgmosfetmodellingforrfidrectification AT ahernandez largesignaldgmosfetmodellingforrfidrectification |