The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature
This paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Journal of Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/715167 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849306537912172544 |
|---|---|
| author | N. Marsi B. Y. Majlis A. A. Hamzah F. Mohd-Yasin |
| author_facet | N. Marsi B. Y. Majlis A. A. Hamzah F. Mohd-Yasin |
| author_sort | N. Marsi |
| collection | DOAJ |
| description | This paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin films. A 3C-SiC diaphragm was bonded with a thickness of 380 μm Si substrate, and a cavity gap of 2.2 μm is formed between the wafers. The MEMS capacitive pressure sensor designs were simulated using COMSOL ver 4.3 software to compare the diaphragm deflection, capacitive performance analysis, von Mises stress, and total electrical energy performance. Both materials are designed with the same layout dimensional with different thicknesses of the diaphragm which are 1.0 μm, 1.6 μm, and 2.2 μm. It is observed that the 3C-SiC thin film is far superior materials to Si thin film mechanically in withstanding higher applied pressures and temperatures. For 3C-SiC and Si, the maximum von Mises stress achieved is 148.32 MPa and 125.48 MPa corresponding to capacitance value which is 1.93 pF and 1.22 pF, respectively. In terms of electrical performance, the maximum output capacitance of 1.93 pF is obtained with less total energy of 5.87 × 10−13 J, thus having a 50% saving as compared to Si. |
| format | Article |
| id | doaj-art-2d4eb547212942be9e0f3b97b6e9fd6e |
| institution | Kabale University |
| issn | 2314-4904 2314-4912 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Engineering |
| spelling | doaj-art-2d4eb547212942be9e0f3b97b6e9fd6e2025-08-20T03:55:02ZengWileyJournal of Engineering2314-49042314-49122014-01-01201410.1155/2014/715167715167The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme TemperatureN. Marsi0B. Y. Majlis1A. A. Hamzah2F. Mohd-Yasin3Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, MalaysiaQueensland Micro- and Nanotechnology Centre (QMNC), Griffith University, Brisbane, QLD 4111, AustraliaThis paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin films. A 3C-SiC diaphragm was bonded with a thickness of 380 μm Si substrate, and a cavity gap of 2.2 μm is formed between the wafers. The MEMS capacitive pressure sensor designs were simulated using COMSOL ver 4.3 software to compare the diaphragm deflection, capacitive performance analysis, von Mises stress, and total electrical energy performance. Both materials are designed with the same layout dimensional with different thicknesses of the diaphragm which are 1.0 μm, 1.6 μm, and 2.2 μm. It is observed that the 3C-SiC thin film is far superior materials to Si thin film mechanically in withstanding higher applied pressures and temperatures. For 3C-SiC and Si, the maximum von Mises stress achieved is 148.32 MPa and 125.48 MPa corresponding to capacitance value which is 1.93 pF and 1.22 pF, respectively. In terms of electrical performance, the maximum output capacitance of 1.93 pF is obtained with less total energy of 5.87 × 10−13 J, thus having a 50% saving as compared to Si.http://dx.doi.org/10.1155/2014/715167 |
| spellingShingle | N. Marsi B. Y. Majlis A. A. Hamzah F. Mohd-Yasin The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature Journal of Engineering |
| title | The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature |
| title_full | The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature |
| title_fullStr | The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature |
| title_full_unstemmed | The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature |
| title_short | The Mechanical and Electrical Effects of MEMS Capacitive Pressure Sensor Based 3C-SiC for Extreme Temperature |
| title_sort | mechanical and electrical effects of mems capacitive pressure sensor based 3c sic for extreme temperature |
| url | http://dx.doi.org/10.1155/2014/715167 |
| work_keys_str_mv | AT nmarsi themechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT bymajlis themechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT aahamzah themechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT fmohdyasin themechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT nmarsi mechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT bymajlis mechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT aahamzah mechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature AT fmohdyasin mechanicalandelectricaleffectsofmemscapacitivepressuresensorbased3csicforextremetemperature |