Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthresh...
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| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Journal of Physics Communications |
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| Online Access: | https://doi.org/10.1088/2399-6528/add5b8 |
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| author | Heyu Liu Mingyan Wang Heng Zhou Guohao Yu Honghuan Guo Baoshun Zhang Peng Cui Zhaojun Lin |
| author_facet | Heyu Liu Mingyan Wang Heng Zhou Guohao Yu Honghuan Guo Baoshun Zhang Peng Cui Zhaojun Lin |
| author_sort | Heyu Liu |
| collection | DOAJ |
| description | In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthreshold swing(SS) for E-mode p-GaN/AlGaN/GaN was investigated. The two-dimensional electron gas (2DEG) concentration beneath the gate-source (G-S) and gate-drain (G-D) regions of the p-GaN HEMT was calculated at zero gate bias voltage using TCAD software. By integrating measured I-V and C-V data, the 2DEG concentration was determined for various gate bias voltages, facilitating iterative calculations to derive additional parameters such as polarization charge and electron mobility. The calculation results show that for the E-mode GaN HEMT, the PCF was gradually weakened as the additional polarization charge decreased with the increase in V _GS . Moreover, for the devices with stronger PCF scattering, the value of the SS was smaller, and the SS value was reduced by over 60%. |
| format | Article |
| id | doaj-art-2d0de4f67fc2447aa2fce90290c6b7f6 |
| institution | Kabale University |
| issn | 2399-6528 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | Journal of Physics Communications |
| spelling | doaj-art-2d0de4f67fc2447aa2fce90290c6b7f62025-08-20T03:53:51ZengIOP PublishingJournal of Physics Communications2399-65282025-01-019505500410.1088/2399-6528/add5b8Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTsHeyu Liu0https://orcid.org/0009-0006-6946-6986Mingyan Wang1https://orcid.org/0000-0002-1305-226XHeng Zhou2https://orcid.org/0000-0001-8790-5870Guohao Yu3https://orcid.org/0000-0002-6921-2728Honghuan Guo4Baoshun Zhang5Peng Cui6https://orcid.org/0000-0002-7120-1294Zhaojun Lin7https://orcid.org/0000-0001-6590-9627School of Integrated Circuits, Institute of Novel Semiconductors Shandong University , Jinan 250100, People’s Republic of ChinaSchool of Integrated Circuits, Institute of Novel Semiconductors Shandong University , Jinan 250100, People’s Republic of ChinaSchool of Integrated Circuits, Institute of Novel Semiconductors Shandong University , Jinan 250100, People’s Republic of ChinaKey Laboratory of Nanodevices and applications, Suzhou institute of Nano-tech and Nano-bionics , CAS, Suzhou 215123, People’s Republic of ChinaSchool of Integrated Circuits, Institute of Novel Semiconductors Shandong University , Jinan 250100, People’s Republic of ChinaKey Laboratory of Nanodevices and applications, Suzhou institute of Nano-tech and Nano-bionics , CAS, Suzhou 215123, People’s Republic of ChinaInstitute of Novel Semiconductors, Shandong University , Jinan 250100, People’s Republic of ChinaSchool of Integrated Circuits, Institute of Novel Semiconductors Shandong University , Jinan 250100, People’s Republic of ChinaIn the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured. The relationship between polarization Coulomb field (PCF) scattering and the subthreshold swing(SS) for E-mode p-GaN/AlGaN/GaN was investigated. The two-dimensional electron gas (2DEG) concentration beneath the gate-source (G-S) and gate-drain (G-D) regions of the p-GaN HEMT was calculated at zero gate bias voltage using TCAD software. By integrating measured I-V and C-V data, the 2DEG concentration was determined for various gate bias voltages, facilitating iterative calculations to derive additional parameters such as polarization charge and electron mobility. The calculation results show that for the E-mode GaN HEMT, the PCF was gradually weakened as the additional polarization charge decreased with the increase in V _GS . Moreover, for the devices with stronger PCF scattering, the value of the SS was smaller, and the SS value was reduced by over 60%.https://doi.org/10.1088/2399-6528/add5b82DEGenhancement modeTCADsubthreshold swingp-GaN/AlGaN/GaN HEMTelectron mobility |
| spellingShingle | Heyu Liu Mingyan Wang Heng Zhou Guohao Yu Honghuan Guo Baoshun Zhang Peng Cui Zhaojun Lin Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs Journal of Physics Communications 2DEG enhancement mode TCAD subthreshold swing p-GaN/AlGaN/GaN HEMT electron mobility |
| title | Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs |
| title_full | Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs |
| title_fullStr | Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs |
| title_full_unstemmed | Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs |
| title_short | Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs |
| title_sort | influence of polarization coulomb field scattering on the subthreshold swing in e mode p gan algan gan hemts |
| topic | 2DEG enhancement mode TCAD subthreshold swing p-GaN/AlGaN/GaN HEMT electron mobility |
| url | https://doi.org/10.1088/2399-6528/add5b8 |
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