Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors
In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth heavy-ions are used to conduct heavy-ion irra...
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MDPI AG
2025-03-01
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| author | Mengtian Bao Ying Wang Jianqun Yang Xingji Li |
| author_facet | Mengtian Bao Ying Wang Jianqun Yang Xingji Li |
| author_sort | Mengtian Bao |
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| description | In this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth heavy-ions are used to conduct heavy-ion irradiation tests. The experimental results show that the SEB failure threshold voltage (<i>V</i><sub>SEB</sub>) of the tested sample is 72 V, which only accounts for 52.6% of the actual breakdown voltage of the device. The <i>V</i><sub>SEB</sub> value decreased with the increase in the flux. The simulation results show that the local “hot spot” formed after the incident heavy ion is an important reason for the drain current degradation of TSGT MOSFETs. To improve the single-event effect tolerance of TSGT MOSFETs, an SEB hardening method based on process optimization is proposed in this paper, which does not require additional customized epitaxial wafers. The simulation results show that, after SEB hardening, the <i>V</i><sub>SEB</sub> is increased to 115 V, which accounts for 89.1% of the breakdown voltage. |
| format | Article |
| id | doaj-art-2cffca252b344a94a80ebfbe38faf0e5 |
| institution | OA Journals |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-03-01 |
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| series | Micromachines |
| spelling | doaj-art-2cffca252b344a94a80ebfbe38faf0e52025-08-20T02:18:04ZengMDPI AGMicromachines2072-666X2025-03-0116441710.3390/mi16040417Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect TransistorsMengtian Bao0Ying Wang1Jianqun Yang2Xingji Li3School of Electronic Information, Huzhou College, Huzhou 313000, ChinaInformation Science and Technology College, Dalian Maritime University, Dalian 116026, ChinaNational Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, ChinaNational Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, ChinaIn this work, the single-event burnout (SEB) effect and degradation behaviors induced by heavy-ion irradiation are investigated in a 120 V-rated transverse split-gate trench (TSGT) power metal-oxide-semiconductor field-effect transistor (MOSFET). Bismuth heavy-ions are used to conduct heavy-ion irradiation tests. The experimental results show that the SEB failure threshold voltage (<i>V</i><sub>SEB</sub>) of the tested sample is 72 V, which only accounts for 52.6% of the actual breakdown voltage of the device. The <i>V</i><sub>SEB</sub> value decreased with the increase in the flux. The simulation results show that the local “hot spot” formed after the incident heavy ion is an important reason for the drain current degradation of TSGT MOSFETs. To improve the single-event effect tolerance of TSGT MOSFETs, an SEB hardening method based on process optimization is proposed in this paper, which does not require additional customized epitaxial wafers. The simulation results show that, after SEB hardening, the <i>V</i><sub>SEB</sub> is increased to 115 V, which accounts for 89.1% of the breakdown voltage.https://www.mdpi.com/2072-666X/16/4/417power MOSFETsingle-event effectSEB hardeningprocess optimization |
| spellingShingle | Mengtian Bao Ying Wang Jianqun Yang Xingji Li Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors Micromachines power MOSFET single-event effect SEB hardening process optimization |
| title | Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors |
| title_full | Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors |
| title_fullStr | Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors |
| title_full_unstemmed | Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors |
| title_short | Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor Field-Effect Transistors |
| title_sort | research on single event effect hardening method of transverse split gate trench metal oxide semiconductor field effect transistors |
| topic | power MOSFET single-event effect SEB hardening process optimization |
| url | https://www.mdpi.com/2072-666X/16/4/417 |
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