Plasma-assisted molecular beam epitaxy growth of high-density nitrogen-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and nitrogen radicals
We demonstrated plasma-assisted molecular beam epitaxy (MBE) growth of high-density nitrogen (N)-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and N radicals. The N density was controlled in a wide range of 1017–1021 cm−3, and single-crystal Ga2O3 thin films wit...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0258551 |
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