APA (7th ed.) Citation

Nakaoka, K., Taniguchi, S., Uehara, T., Inajima, J., Tsujimoto, K., Teramura, Y., . . . Higashiwaki, M. Plasma-assisted molecular beam epitaxy growth of high-density nitrogen-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and nitrogen radicals. AIP Publishing LLC.

Chicago Style (17th ed.) Citation

Nakaoka, Kura, Shoki Taniguchi, Tomoki Uehara, Jin Inajima, Kohki Tsujimoto, Yusuke Teramura, Satoko Honda, YongGu Shim, and Masataka Higashiwaki. Plasma-assisted Molecular Beam Epitaxy Growth of High-density Nitrogen-doped Ga2O3 Thin Films on Ga2O3 (010) Substrates by Simultaneously Supplying Oxygen and Nitrogen Radicals. AIP Publishing LLC.

MLA (9th ed.) Citation

Nakaoka, Kura, et al. Plasma-assisted Molecular Beam Epitaxy Growth of High-density Nitrogen-doped Ga2O3 Thin Films on Ga2O3 (010) Substrates by Simultaneously Supplying Oxygen and Nitrogen Radicals. AIP Publishing LLC.