Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector
We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) sho...
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/847510 |
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| author | W. W. Wang F. M. Guo Y. Q. Li |
| author_facet | W. W. Wang F. M. Guo Y. Q. Li |
| author_sort | W. W. Wang |
| collection | DOAJ |
| description | We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies. |
| format | Article |
| id | doaj-art-2cea1796f5ae4fbda8c4a0cf3f86c6be |
| institution | OA Journals |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
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| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-2cea1796f5ae4fbda8c4a0cf3f86c6be2025-08-20T02:24:18ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/847510847510Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot PhotodetectorW. W. Wang0F. M. Guo1Y. Q. Li2Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, ChinaShanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, ChinaShanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, No. 500, Dong Chuan Road, Shanghai 200241, ChinaWe simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.http://dx.doi.org/10.1155/2015/847510 |
| spellingShingle | W. W. Wang F. M. Guo Y. Q. Li Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector Advances in Condensed Matter Physics |
| title | Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector |
| title_full | Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector |
| title_fullStr | Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector |
| title_full_unstemmed | Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector |
| title_short | Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector |
| title_sort | modeling and simulation of a resonant cavity enhanced ingaas gaas quantum dot photodetector |
| url | http://dx.doi.org/10.1155/2015/847510 |
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