Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique
Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01011.pdf |
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| author | M.M. Ivashchenko A.S. Opanasyuk I.P. Buryk V.A. Lutsenko A.V. Shevchenko |
| author_facet | M.M. Ivashchenko A.S. Opanasyuk I.P. Buryk V.A. Lutsenko A.V. Shevchenko |
| author_sort | M.M. Ivashchenko |
| collection | DOAJ |
| description | Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg (2.63-2.69) eV for ZnSe films and Eg (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors. |
| format | Article |
| id | doaj-art-2ca1d85efa3f4364906a84ddd5fc64fe |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-02-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-2ca1d85efa3f4364906a84ddd5fc64fe2025-08-20T02:24:18ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-02-019101011-101011-510.21272/jnep.9(1).01011Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS TechniqueM.M. Ivashchenko0A.S. Opanasyuk1I.P. Buryk2V.A. Lutsenko3A.V. Shevchenko4Konotop Institute of Sumy State University, 24, Myru ave., 41615 Konotop, UkraineSumy State University, 2, Rimsky-Korsakov str., 40007 Sumy, UkraineKonotop Institute of Sumy State University, 24, Myru ave., 41615 Konotop, UkraineKonotop Institute of Sumy State University, 24, Myru ave., 41615 Konotop, UkraineKonotop Institute of Sumy State University, 24, Myru ave., 41615 Konotop, UkrainePure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg (2.63-2.69) eV for ZnSe films and Eg (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors.http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01011.pdfZnSeZnSeEuOptical propertiesVacuum sublimationTransmittanceBand ga |
| spellingShingle | M.M. Ivashchenko A.S. Opanasyuk I.P. Buryk V.A. Lutsenko A.V. Shevchenko Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique Журнал нано- та електронної фізики ZnSe ZnSe Eu Optical properties Vacuum sublimation Transmittance Band ga |
| title | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
| title_full | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
| title_fullStr | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
| title_full_unstemmed | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
| title_short | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
| title_sort | optical properties of pure and eu doped znse films deposited by csvs technique |
| topic | ZnSe ZnSe Eu Optical properties Vacuum sublimation Transmittance Band ga |
| url | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01011.pdf |
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