Formation of titanium oxide thin films by reactive magnetron sputtering
The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content i...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-07-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/1156 |
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| _version_ | 1849336411089534976 |
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| author | N. Villa D. A. Golosov T. D. Nguyen |
| author_facet | N. Villa D. A. Golosov T. D. Nguyen |
| author_sort | N. Villa |
| collection | DOAJ |
| description | The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O2 gas mixture during film deposition were established. Films with a dielectric constant of 20-30 units, a dielectric loss tangent of 0,02, a band gap of 3,82 eV, a leakage current density of less than 1,0 A/cm2 at an electric field strength of 2,0*106 V/cm, were obtained. |
| format | Article |
| id | doaj-art-2ca15eab944f4427a1fa74a5c4b88430 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-07-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-2ca15eab944f4427a1fa74a5c4b884302025-08-20T03:44:58ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-07-0105879310.35596/1729-7648-2019-123-5-87-931155Formation of titanium oxide thin films by reactive magnetron sputteringN. Villa0D. A. Golosov1T. D. Nguyen2Belarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsBelarusian state university of informatics and radioelectronicsThe article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O2 gas mixture during film deposition were established. Films with a dielectric constant of 20-30 units, a dielectric loss tangent of 0,02, a band gap of 3,82 eV, a leakage current density of less than 1,0 A/cm2 at an electric field strength of 2,0*106 V/cm, were obtained.https://doklady.bsuir.by/jour/article/view/1156titanium oxidereactive magnetron sputteringmos structuredielectric properties |
| spellingShingle | N. Villa D. A. Golosov T. D. Nguyen Formation of titanium oxide thin films by reactive magnetron sputtering Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki titanium oxide reactive magnetron sputtering mos structure dielectric properties |
| title | Formation of titanium oxide thin films by reactive magnetron sputtering |
| title_full | Formation of titanium oxide thin films by reactive magnetron sputtering |
| title_fullStr | Formation of titanium oxide thin films by reactive magnetron sputtering |
| title_full_unstemmed | Formation of titanium oxide thin films by reactive magnetron sputtering |
| title_short | Formation of titanium oxide thin films by reactive magnetron sputtering |
| title_sort | formation of titanium oxide thin films by reactive magnetron sputtering |
| topic | titanium oxide reactive magnetron sputtering mos structure dielectric properties |
| url | https://doklady.bsuir.by/jour/article/view/1156 |
| work_keys_str_mv | AT nvilla formationoftitaniumoxidethinfilmsbyreactivemagnetronsputtering AT dagolosov formationoftitaniumoxidethinfilmsbyreactivemagnetronsputtering AT tdnguyen formationoftitaniumoxidethinfilmsbyreactivemagnetronsputtering |