Microstructure evolution of CdZnTe crystals irradiated by heavy ions
Consideration of irradiation effects is important for in-orbit operation and radiation protection in aerospace applications. The configuration of irradiation defects and their impact on deteriorating the carrier transport properties of CZT crystals need to be clarified. In this study, the microdefec...
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2024-11-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424022257 |
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| author | Lu Liang Lingyan Xu Chi Qin Yingming Wang Zhentao Qin Chongqi Liu Lixiang Lian Ce Zheng Yadong Xu Wanqi Jie |
| author_facet | Lu Liang Lingyan Xu Chi Qin Yingming Wang Zhentao Qin Chongqi Liu Lixiang Lian Ce Zheng Yadong Xu Wanqi Jie |
| author_sort | Lu Liang |
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| description | Consideration of irradiation effects is important for in-orbit operation and radiation protection in aerospace applications. The configuration of irradiation defects and their impact on deteriorating the carrier transport properties of CZT crystals need to be clarified. In this study, the microdefect evolution mechanism of CdZnTe (CZT) crystals under 10 MeV Chlorine (Cl) ion irradiation at flux of 1 × 1010∼1 × 1012 n·cm−2 are investigated. The stacking faults first appear in the CZT crystal at 4.5 × 10−4 displacement per atom (dpa), which are categorized into slip-type, gap-type and vacancy-type. In order to hinder the further expansion of stacking fault, S-shaped stacking fault dipole appears. When the dpa reaches 4.5 × 10−2, the local phase transition occurs in the damage zone to form CuPt-A ordered phase with ZnTe/CdTe periodic arrangement because the fluctuation in local composition and strain caused by cascade collisions. The deterioration of electric field distribution and charge collection caused by irradiation damage layer leads to the decrease of γ-ray detection ability. The energy resolution (ER) of the CZT detector for γ-ray can be maintained at 30.6% when the ion flux accumulates to 1 × 1012 n·cm−2, revealing high irradiation hardness. Consequently, these findings provide a theoretical basis for the radiation damage recovery of CZT detectors, further demonstrating that CZT crystals are the most competitive new generation of room-temperature nuclear radiation detection materials, and can provide radiation protection strategies for similar compound semiconductor materials. |
| format | Article |
| id | doaj-art-2c7f597b2a5d4acc84ecb1810fd6e5e0 |
| institution | OA Journals |
| issn | 2238-7854 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Elsevier |
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| series | Journal of Materials Research and Technology |
| spelling | doaj-art-2c7f597b2a5d4acc84ecb1810fd6e5e02025-08-20T02:35:31ZengElsevierJournal of Materials Research and Technology2238-78542024-11-01332455246310.1016/j.jmrt.2024.09.220Microstructure evolution of CdZnTe crystals irradiated by heavy ionsLu Liang0Lingyan Xu1Chi Qin2Yingming Wang3Zhentao Qin4Chongqi Liu5Lixiang Lian6Ce Zheng7Yadong Xu8Wanqi Jie9State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Corresponding author. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China.State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaScience and Technology on Thermo Structural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaState Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China; Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, ChinaConsideration of irradiation effects is important for in-orbit operation and radiation protection in aerospace applications. The configuration of irradiation defects and their impact on deteriorating the carrier transport properties of CZT crystals need to be clarified. In this study, the microdefect evolution mechanism of CdZnTe (CZT) crystals under 10 MeV Chlorine (Cl) ion irradiation at flux of 1 × 1010∼1 × 1012 n·cm−2 are investigated. The stacking faults first appear in the CZT crystal at 4.5 × 10−4 displacement per atom (dpa), which are categorized into slip-type, gap-type and vacancy-type. In order to hinder the further expansion of stacking fault, S-shaped stacking fault dipole appears. When the dpa reaches 4.5 × 10−2, the local phase transition occurs in the damage zone to form CuPt-A ordered phase with ZnTe/CdTe periodic arrangement because the fluctuation in local composition and strain caused by cascade collisions. The deterioration of electric field distribution and charge collection caused by irradiation damage layer leads to the decrease of γ-ray detection ability. The energy resolution (ER) of the CZT detector for γ-ray can be maintained at 30.6% when the ion flux accumulates to 1 × 1012 n·cm−2, revealing high irradiation hardness. Consequently, these findings provide a theoretical basis for the radiation damage recovery of CZT detectors, further demonstrating that CZT crystals are the most competitive new generation of room-temperature nuclear radiation detection materials, and can provide radiation protection strategies for similar compound semiconductor materials.http://www.sciencedirect.com/science/article/pii/S2238785424022257Radiation damageCZT single crystalsMicrostructure evolutionPhase transformationRadiation protection |
| spellingShingle | Lu Liang Lingyan Xu Chi Qin Yingming Wang Zhentao Qin Chongqi Liu Lixiang Lian Ce Zheng Yadong Xu Wanqi Jie Microstructure evolution of CdZnTe crystals irradiated by heavy ions Journal of Materials Research and Technology Radiation damage CZT single crystals Microstructure evolution Phase transformation Radiation protection |
| title | Microstructure evolution of CdZnTe crystals irradiated by heavy ions |
| title_full | Microstructure evolution of CdZnTe crystals irradiated by heavy ions |
| title_fullStr | Microstructure evolution of CdZnTe crystals irradiated by heavy ions |
| title_full_unstemmed | Microstructure evolution of CdZnTe crystals irradiated by heavy ions |
| title_short | Microstructure evolution of CdZnTe crystals irradiated by heavy ions |
| title_sort | microstructure evolution of cdznte crystals irradiated by heavy ions |
| topic | Radiation damage CZT single crystals Microstructure evolution Phase transformation Radiation protection |
| url | http://www.sciencedirect.com/science/article/pii/S2238785424022257 |
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