Atomistic behavior of Cu–Cu solid-state bonding in polycrystalline Cu with high-density boundaries
Low-temperature Cu–Cu solid-state bonding is key for interconnect miniaturization and higher current densities in advanced semiconductor devices. Achieving reliable joints requires effective void closure at the interface, driven by diffusion. We employed molecular dynamics simulations to elucidate t...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
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| Series: | Materials & Design |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127524009511 |
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