A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water
Abstract In the growing field of low‐cost electronics, the epitaxy of complex oxide thin films on a Si substrate requires significant technical means. Therefore, a large attention is paid to the release of a freestanding oxide of interest from its deposition support which is then placed onto a low‐c...
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| Format: | Article |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202500094 |
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| author | Vincent Polewczyk Bruno Bérini Aïmane Cheikh Deepak Dagur Moussa Mezhoud Oualyd El‐Khaloufi Moussa Mebarki Luca Braglia Simon Hurand Arnaud Fouchet Giovanni Vinai Piero Torelli Adrian David Yves Dumont Ulrike Lüders |
| author_facet | Vincent Polewczyk Bruno Bérini Aïmane Cheikh Deepak Dagur Moussa Mezhoud Oualyd El‐Khaloufi Moussa Mebarki Luca Braglia Simon Hurand Arnaud Fouchet Giovanni Vinai Piero Torelli Adrian David Yves Dumont Ulrike Lüders |
| author_sort | Vincent Polewczyk |
| collection | DOAJ |
| description | Abstract In the growing field of low‐cost electronics, the epitaxy of complex oxide thin films on a Si substrate requires significant technical means. Therefore, a large attention is paid to the release of a freestanding oxide of interest from its deposition support which is then placed onto a low‐cost substrate, via the etching of an intermediate sacrificial layer. The use of a sacrificial layer offers several advantages since the flexible polymer exploited for the transfer can also be fully utilized to design a flexible heterostructure. For green technology, more and more research investigations are being undertaken on these sacrificial layers etched by water. While Sr3Al2O6 and SrVO3 are archetypical examples, the need to find new materials with different lattice parameters and symmetry is critical to reach the epitaxy of numerous materials of interest. In this study, the possibilities of an A‐site cationic variation in AVO3 with A = Sr and/or Ca thin films are highlighted to expand the water‐soluble material's family reaching the smallest lattice parameter ever presented up to now. In addition to bring various compounds with different ageing properties to the literature, optical spectrophotometry operando characterizations to follow the chemical etching of the sacrificial layers in real‐time are exploited. |
| format | Article |
| id | doaj-art-2baf37f55212448c84bae86358aee669 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-2baf37f55212448c84bae86358aee6692025-08-20T03:27:51ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-06-011212n/an/a10.1002/admi.202500094A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in WaterVincent Polewczyk0Bruno Bérini1Aïmane Cheikh2Deepak Dagur3Moussa Mezhoud4Oualyd El‐Khaloufi5Moussa Mebarki6Luca Braglia7Simon Hurand8Arnaud Fouchet9Giovanni Vinai10Piero Torelli11Adrian David12Yves Dumont13Ulrike Lüders14UVSQ, CNRS, GEMaC Université Paris‐Saclay Versailles 78000 FranceUVSQ, CNRS, GEMaC Université Paris‐Saclay Versailles 78000 FranceUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceCNR – Istituto Officina dei Materiali (IOM) Area Science Park, S.S.14, km 163.5 Trieste I‐34149 ItalyUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceUVSQ, CNRS, GEMaC Université Paris‐Saclay Versailles 78000 FranceCNR – Istituto Officina dei Materiali (IOM) Area Science Park, S.S.14, km 163.5 Trieste I‐34149 ItalyInstitut Pprime CNRS – Université de Poitiers – ENSMA 11 Bd Marie et Pierre Curie Chasseneuil‐du‐Poitou 86360 FranceUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceCNR – Istituto Officina dei Materiali (IOM) Area Science Park, S.S.14, km 163.5 Trieste I‐34149 ItalyCNR – Istituto Officina dei Materiali (IOM) Area Science Park, S.S.14, km 163.5 Trieste I‐34149 ItalyUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceUVSQ, CNRS, GEMaC Université Paris‐Saclay Versailles 78000 FranceUniversité de Caen Normandie, ENSICAEN, CNRS UMR 6508, CRISMAT Normandie Univ Caen 14000 FranceAbstract In the growing field of low‐cost electronics, the epitaxy of complex oxide thin films on a Si substrate requires significant technical means. Therefore, a large attention is paid to the release of a freestanding oxide of interest from its deposition support which is then placed onto a low‐cost substrate, via the etching of an intermediate sacrificial layer. The use of a sacrificial layer offers several advantages since the flexible polymer exploited for the transfer can also be fully utilized to design a flexible heterostructure. For green technology, more and more research investigations are being undertaken on these sacrificial layers etched by water. While Sr3Al2O6 and SrVO3 are archetypical examples, the need to find new materials with different lattice parameters and symmetry is critical to reach the epitaxy of numerous materials of interest. In this study, the possibilities of an A‐site cationic variation in AVO3 with A = Sr and/or Ca thin films are highlighted to expand the water‐soluble material's family reaching the smallest lattice parameter ever presented up to now. In addition to bring various compounds with different ageing properties to the literature, optical spectrophotometry operando characterizations to follow the chemical etching of the sacrificial layers in real‐time are exploited.https://doi.org/10.1002/admi.202500094flexible electronicslow‐cost electronicssacrificial layerthin filmwater etching |
| spellingShingle | Vincent Polewczyk Bruno Bérini Aïmane Cheikh Deepak Dagur Moussa Mezhoud Oualyd El‐Khaloufi Moussa Mebarki Luca Braglia Simon Hurand Arnaud Fouchet Giovanni Vinai Piero Torelli Adrian David Yves Dumont Ulrike Lüders A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water Advanced Materials Interfaces flexible electronics low‐cost electronics sacrificial layer thin film water etching |
| title | A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water |
| title_full | A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water |
| title_fullStr | A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water |
| title_full_unstemmed | A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water |
| title_short | A‐Site Cationic Variation to Expand the Sacrificial Layer AVO3 Family Dissolving in Water |
| title_sort | a site cationic variation to expand the sacrificial layer avo3 family dissolving in water |
| topic | flexible electronics low‐cost electronics sacrificial layer thin film water etching |
| url | https://doi.org/10.1002/admi.202500094 |
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