Optimisation of piezoelectric and dielectric properties of Bi4Ti2.95W0.05O12 ceramics by Ce4+ doping
High-temperature lead-free Bi4-xCexTi2.95W0.05O12 (where x = 0, 0.02, 0.04, 0.06) piezoelectric ceramics were prepared by conventional solid-state method and sintering at 1080°C. This study investigated the effects of modulating the degree of ceramic lattice distortion by varying the amount of Ce4+...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Novi Sad
2025-03-01
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| Series: | Processing and Application of Ceramics |
| Subjects: | |
| Online Access: | https://doiserbia.nb.rs/img/doi/1820-6131/2025/1820-61312501065C.pdf |
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| Summary: | High-temperature lead-free Bi4-xCexTi2.95W0.05O12 (where x = 0, 0.02, 0.04, 0.06) piezoelectric ceramics were prepared by conventional solid-state method and sintering at 1080°C. This study investigated the effects of modulating the degree of ceramic lattice distortion by varying the amount of Ce4+ doping on the microscopic morphology as well as the piezoelectric and dielectric properties. The results indicated that an appropriate level of Ce4+ doping resulted in a suitable degree of lattice distortion within the piezoelectric ceramics, thereby enhancing both the piezoelectric and dielectric properties while reducing dielectric losses. Notably, when the doping level reached x = 0.04, the sample exhibited its optimal performance, specifically with a d33 of 25 Pc/N, TC of 618°C, tan δ of 0.09 and Qm of 3364. These findings strongly suggest that this material has significant potential for applications in high-level sensing domain. |
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| ISSN: | 1820-6131 2406-1034 |