A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction
Abstract High-entropy oxides (HEOs) are a class of promising materials with multielement tunability and untold scientific merits, yet the controllable preparation of nano-sized HEOs is notoriously difficult. Herein, we utilize the natural oxide layer on liquid gallium as an ideal substrate to facili...
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| Format: | Article |
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Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-60399-9 |
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| author | Wenyang Zhang Huixin Jin Yanna Guo Yinghao Cui Jingyu Qin Jianxin Zhang Yusuke Yamauchi Yoshiyuki Sugahara |
| author_facet | Wenyang Zhang Huixin Jin Yanna Guo Yinghao Cui Jingyu Qin Jianxin Zhang Yusuke Yamauchi Yoshiyuki Sugahara |
| author_sort | Wenyang Zhang |
| collection | DOAJ |
| description | Abstract High-entropy oxides (HEOs) are a class of promising materials with multielement tunability and untold scientific merits, yet the controllable preparation of nano-sized HEOs is notoriously difficult. Herein, we utilize the natural oxide layer on liquid gallium as an ideal substrate to facilitate the synthesis of thin HEO. Through experiments and density functional theory (DFT) calculations, it is found that Ga2O3 layer exhibits a strong affinity for metal ions and oxides, which not only enables it to anchor multiple metal ions and facilitate the formation of HEO, but also introduces a strain effect that can lower the free-energy barrier for oxygen evolution reaction (OER). It increases the exposed surface area and active sites of HEO, enhancing its reaction efficiency. As a result, the Ga2O3-supported thin HEO film (Mn0.65Fe0.59Co0.83Ni0.48Zn0.45O4) shows satisfactory OER performance compared with other control groups. This study exemplifies the potential of the liquid Ga2O3 layer as an affinity substrate for high-entropy material synthesis. |
| format | Article |
| id | doaj-art-2b51cb905cca4dd5a978bc526859dda3 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-2b51cb905cca4dd5a978bc526859dda32025-08-20T04:03:06ZengNature PortfolioNature Communications2041-17232025-07-0116111110.1038/s41467-025-60399-9A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reactionWenyang Zhang0Huixin Jin1Yanna Guo2Yinghao Cui3Jingyu Qin4Jianxin Zhang5Yusuke Yamauchi6Yoshiyuki Sugahara7School of Advanced Science and Engineering, Waseda University, ShinjukuDepartment of Materials Science and Technology, Tokyo University of ScienceSchool of Advanced Science and Engineering, Waseda University, ShinjukuSchool of Advanced Science and Engineering, Waseda University, ShinjukuSchool of Materials Science and Engineering, Shandong University, No. 17923, Jingshi RoadSchool of Materials Science and Engineering, Shandong University, No. 17923, Jingshi RoadDepartment of Materials Process Engineering Graduate School of Engineering, Nagoya UniversitySchool of Advanced Science and Engineering, Waseda University, ShinjukuAbstract High-entropy oxides (HEOs) are a class of promising materials with multielement tunability and untold scientific merits, yet the controllable preparation of nano-sized HEOs is notoriously difficult. Herein, we utilize the natural oxide layer on liquid gallium as an ideal substrate to facilitate the synthesis of thin HEO. Through experiments and density functional theory (DFT) calculations, it is found that Ga2O3 layer exhibits a strong affinity for metal ions and oxides, which not only enables it to anchor multiple metal ions and facilitate the formation of HEO, but also introduces a strain effect that can lower the free-energy barrier for oxygen evolution reaction (OER). It increases the exposed surface area and active sites of HEO, enhancing its reaction efficiency. As a result, the Ga2O3-supported thin HEO film (Mn0.65Fe0.59Co0.83Ni0.48Zn0.45O4) shows satisfactory OER performance compared with other control groups. This study exemplifies the potential of the liquid Ga2O3 layer as an affinity substrate for high-entropy material synthesis.https://doi.org/10.1038/s41467-025-60399-9 |
| spellingShingle | Wenyang Zhang Huixin Jin Yanna Guo Yinghao Cui Jingyu Qin Jianxin Zhang Yusuke Yamauchi Yoshiyuki Sugahara A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction Nature Communications |
| title | A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction |
| title_full | A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction |
| title_fullStr | A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction |
| title_full_unstemmed | A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction |
| title_short | A universal approach for thin high-entropy oxides regulated by Ga2O3 layers for oxygen evolution reaction |
| title_sort | universal approach for thin high entropy oxides regulated by ga2o3 layers for oxygen evolution reaction |
| url | https://doi.org/10.1038/s41467-025-60399-9 |
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