Polarization-Independent Mode-Evolution-Based Coupler for the Silicon-on-Insulator Platform

Polarization-Independent Mode-Evolution-Based Coupler for the Silicon-on-Insulator Platform

We demonstrate a polarization-independent mode-evolution-based coupler for the silicon-on-insulator platform. The measured coupler has negligible insertion loss over a bandwidth of about 100 nm, i.e., from 1500 to 1600 nm. The measured maximum power imbalances for the polarizat...

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Bibliographic Details
Main Authors: Yun Wang, Luhua Xu, Han Yun, Minglei Ma, Amar Kumar, Eslam El-Fiky, Rui Li, Nicolas Abadiacalvo, Lukas Chrostowski, Nicolas A. F. Jaeger, David V. Plant
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Silicon nanophotonics
waveguide devices.
Online Access:https://ieeexplore.ieee.org/document/8358761/
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Summary:We demonstrate a polarization-independent mode-evolution-based coupler for the silicon-on-insulator platform. The measured coupler has negligible insertion loss over a bandwidth of about 100&#x00A0;nm, i.e., from 1500 to 1600&#x00A0;nm. The measured maximum power imbalances for the polarization-independent coupler are 1.2 and 0.2&#x00A0;dB for the fundamental transverse electric (TE<inline-formula><tex-math notation="LaTeX">$_\text{00}$</tex-math></inline-formula> ) mode and the fundamental transverse magnetic (TM<inline-formula><tex-math notation="LaTeX">$_\text{00}$</tex-math> </inline-formula>) mode, respectively. Our coupler also has a compact design footprint with mode-evolution region not more than <inline-formula><tex-math notation="LaTeX">${75}{-\mu {\rm m}}$</tex-math></inline-formula> long.
ISSN:1943-0655

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