Analog Behavioral Modeling of Schottky Diode Using Spice
This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available d...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-02-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01002.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850237530227605504 |
|---|---|
| author | Messaadi Lotfi Dibi Zohir |
| author_facet | Messaadi Lotfi Dibi Zohir |
| author_sort | Messaadi Lotfi |
| collection | DOAJ |
| description | This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C. |
| format | Article |
| id | doaj-art-2abf818abbad4aa9b20235289894248e |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-02-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-2abf818abbad4aa9b20235289894248e2025-08-20T02:01:42ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-02-019101002-101002-410.21272/jnep.9(1).01002Analog Behavioral Modeling of Schottky Diode Using SpiceMessaadi Lotfi0Dibi Zohir1University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, AlgeriaUniversity of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, AlgeriaThis paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C.http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01002.pdfSilicon carbideReverse recoverySchottky diodeTemperature effectModelingpspiceABMCharacterizatio |
| spellingShingle | Messaadi Lotfi Dibi Zohir Analog Behavioral Modeling of Schottky Diode Using Spice Журнал нано- та електронної фізики Silicon carbide Reverse recovery Schottky diode Temperature effect Modeling pspice ABM Characterizatio |
| title | Analog Behavioral Modeling of Schottky Diode Using Spice |
| title_full | Analog Behavioral Modeling of Schottky Diode Using Spice |
| title_fullStr | Analog Behavioral Modeling of Schottky Diode Using Spice |
| title_full_unstemmed | Analog Behavioral Modeling of Schottky Diode Using Spice |
| title_short | Analog Behavioral Modeling of Schottky Diode Using Spice |
| title_sort | analog behavioral modeling of schottky diode using spice |
| topic | Silicon carbide Reverse recovery Schottky diode Temperature effect Modeling pspice ABM Characterizatio |
| url | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01002.pdf |
| work_keys_str_mv | AT messaadilotfi analogbehavioralmodelingofschottkydiodeusingspice AT dibizohir analogbehavioralmodelingofschottkydiodeusingspice |