Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor
A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor is designed and characterized theoretically. A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si<sub>3</sub>N<sub&...
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2018-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/8239796/ |
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| author | Yan Liu Cizhe Fang Xi Gao Genquan Han Qingfang Zhang Yao Shao Jincheng Zhang Yue Hao |
| author_facet | Yan Liu Cizhe Fang Xi Gao Genquan Han Qingfang Zhang Yao Shao Jincheng Zhang Yue Hao |
| author_sort | Yan Liu |
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| description | A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor is designed and characterized theoretically. A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si<sub>3</sub>N<sub>4</sub> liner stressor. The boosting effects of tensile strain on the threshold current density <italic>J</italic><sub>th</sub> and optical gain in GeSn/SiGeSn lasers are attributed to the modulation of energy band structure and carrier distribution in the GeSn wells. Tensile-strained Ge<sub>0.90</sub>Sn <sub>0.10</sub>/Si<sub>0.161</sub>Ge<sub>0.695</sub>Sn<sub>0.144</sub> MQW laser wrapped in 500 nm Si<sub>3</sub>N<sub> 4</sub> liner stressor achieves a <italic>J</italic><sub>th</sub> reduction from 476 to 168 A/cm<sup>2</sup> and a significant enhancement of optical gain, as compared to the relaxed control device without Si<sub>3</sub>N<sub>4</sub> . The design of GeSn/SiGeSn MQW structure wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor provides a practical way to realize high performance GeSn based mid-infrared laser. |
| format | Article |
| id | doaj-art-29d918ad3b7149dead772dfe42abb7b9 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-29d918ad3b7149dead772dfe42abb7b92025-08-20T03:32:37ZengIEEEIEEE Photonics Journal1943-06552018-01-011011910.1109/JPHOT.2017.27871958239796Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner StressorYan Liu0Cizhe Fang1Xi Gao2Genquan Han3https://orcid.org/0000-0001-5140-4150Qingfang Zhang4Yao Shao5https://orcid.org/0000-0002-6117-3517Jincheng Zhang6Yue Hao7Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaSchool of Electric and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou, ChinaState Key Laboratory of Power Grid Security and Energy Conservation, China Electric Power Research Institute, Beijing, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaA tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor is designed and characterized theoretically. A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si<sub>3</sub>N<sub>4</sub> liner stressor. The boosting effects of tensile strain on the threshold current density <italic>J</italic><sub>th</sub> and optical gain in GeSn/SiGeSn lasers are attributed to the modulation of energy band structure and carrier distribution in the GeSn wells. Tensile-strained Ge<sub>0.90</sub>Sn <sub>0.10</sub>/Si<sub>0.161</sub>Ge<sub>0.695</sub>Sn<sub>0.144</sub> MQW laser wrapped in 500 nm Si<sub>3</sub>N<sub> 4</sub> liner stressor achieves a <italic>J</italic><sub>th</sub> reduction from 476 to 168 A/cm<sup>2</sup> and a significant enhancement of optical gain, as compared to the relaxed control device without Si<sub>3</sub>N<sub>4</sub> . The design of GeSn/SiGeSn MQW structure wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor provides a practical way to realize high performance GeSn based mid-infrared laser.https://ieeexplore.ieee.org/document/8239796/GeSn/SiGeSnquantum well laserSi3N4 liner stressor |
| spellingShingle | Yan Liu Cizhe Fang Xi Gao Genquan Han Qingfang Zhang Yao Shao Jincheng Zhang Yue Hao Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor IEEE Photonics Journal GeSn/SiGeSn quantum well laser Si3N4 liner stressor |
| title | Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor |
| title_full | Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor |
| title_fullStr | Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor |
| title_full_unstemmed | Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor |
| title_short | Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor |
| title_sort | theoretical investigation of tensile strained gesn sigesn multiple quantum well laser wrapped in si 3n4 liner stressor |
| topic | GeSn/SiGeSn quantum well laser Si3N4 liner stressor |
| url | https://ieeexplore.ieee.org/document/8239796/ |
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