Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor
A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor is designed and characterized theoretically. A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si<sub>3</sub>N<sub&...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8239796/ |
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| Summary: | A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor is designed and characterized theoretically. A biaxial tensile strain is introduced into the GeSn/SiGeSn MQW laser by the Si<sub>3</sub>N<sub>4</sub> liner stressor. The boosting effects of tensile strain on the threshold current density <italic>J</italic><sub>th</sub> and optical gain in GeSn/SiGeSn lasers are attributed to the modulation of energy band structure and carrier distribution in the GeSn wells. Tensile-strained Ge<sub>0.90</sub>Sn <sub>0.10</sub>/Si<sub>0.161</sub>Ge<sub>0.695</sub>Sn<sub>0.144</sub> MQW laser wrapped in 500 nm Si<sub>3</sub>N<sub> 4</sub> liner stressor achieves a <italic>J</italic><sub>th</sub> reduction from 476 to 168 A/cm<sup>2</sup> and a significant enhancement of optical gain, as compared to the relaxed control device without Si<sub>3</sub>N<sub>4</sub> . The design of GeSn/SiGeSn MQW structure wrapped in Si<sub>3</sub>N<sub>4</sub> liner stressor provides a practical way to realize high performance GeSn based mid-infrared laser. |
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| ISSN: | 1943-0655 |